MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Hernandez, Armando; Islam, Minhazul; Saddatkia, Pooneh; Codding, Charles L.; Dulal, Prabin; Agarwal, Sahil; Janover, Adam; Novak, Steve; Huang, Mengbing; Dang, Tuoc; Snure, Mike; Selim, F. A.

doi:10.1016/j.rinp.2021.104167

Cited by 30 publications

(18 citation statements)

References 43 publications

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“…In the case of carbon-related shallow donor defects, only the singly charged defects of Ga sites replaced by carbon have been reported [25][26][27]. Since the silicon concentrations are substantially lower than N d1 + N d2 for all the four samples and the main contribution of unintentional H doping was considered in N d2 , UICD cannot be negligible in our films.…”

Section: Resultsmentioning

confidence: 82%

“…Fig. 5b shows the [24,43] V Ga Rule out Deep acceptor [44,45,51] Silicon-related Si O Rule out Positive formation energy [46] Si Ga [24,47] The first donor level Singly charged defect Hydrogen-related V Ga -xH [48,49] Rule out Conflict to our experiment H i Rule out Not exist in H-doped Ga 2 O 3 [49] Si Ga -OH [50] The second donor level Doubly charged defect Carbon-related C O Rule out Positive formation energy [25] C Ga [26] The first donor level Singly charged defect formation energy for silicon to take a Ga site as a reference, and Fig. 5c, d plot the formation energy of the UID defects.…”

Section: Science China Materialsmentioning

confidence: 88%

“…Using an Agnitron Technology Agilis R&D MOCVD system, four epitaxial β-Ga 2 O 3 films with different donor concentrations were grown on (010)-oriented Fe-doped semi-insulating β-Ga 2 O 3 substrates. Due to the severe unintentional carbon doping (UICD) observed in the film based on trimethylgallium (TMGa) [26,31], triethylgallium (TEGa) was used as the metalorganic precursors for gallium. Pure O 2 and argon were used as oxidation and the carrier to deliver the TEGa vapor into the growth chamber, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…However, the origin of these donor states is still not fully understood. Although it has been widely accepted that the substitution of silicon for Ga(I) sites [24] is the main origin of donors in Si-doped MOCVD films, recent experiments reveal that there are still some other types of shallow donors that may play important roles [25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

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Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Xiang

Chen

et al. 2022

Sci. China Mater.

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High-quality β-Ga 2 O 3 films were epitaxially grown by using metalorganic chemical vapor deposition (MOCVD) with different donor concentrations, and their shallow donor states were investigated by the temperaturedependent Hall measurement and secondary ion mass spectroscopy (SIMS) analysis. Two donor levels with ionization energies of ~36 and ~140 meV were extracted. It is found that the unintentional doping (UID) effects in MOCVD contribute substantially to both these two levels: the first donor level may come not only from silicon doping but also from unintentional substitution of carbon for Ga sites, and the second donor level probably comes from doubly charged defects related to unintentional H doping. By analyzing the relationship between the growth conditions and donor states, combined with density functional theory calculations, it is found that reducing the oxygen partial pressure during the growth might be a feasible way to reduce the UID effect. This work paves the way to the precise control of carrier density in Si-doped MOCVD β-Ga 2 O 3 films.

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Section: Resultsmentioning

confidence: 82%

Section: Science China Materialsmentioning

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Xiang

Chen

et al. 2022

Sci. China Mater.

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“…In recent years, the potential of Ga 2 O 3 in power devices has been paid more attention to due to its high band gap of 4.9 eV, breakdown electric field strength of 8.0 MV/cm, and lower conduction losses [ 1 , 2 , 3 , 4 , 5 ]. The realizations of Ga 2 O 3 materials in crystal growth [ 6 , 7 , 8 ], film preparation [ 9 , 10 , 11 , 12 , 13 ], and doping control [ 14 , 15 , 16 , 17 ] provide conditions for high-performance Ga 2 O 3 devices. Currently, vertical structure Ga 2 O 3 -based Schottky barrier diodes (SBDs) [ 4 , 5 , 18 , 19 , 20 ], heterojunction diodes (HJDs) [ 21 , 22 , 23 , 24 , 25 ] have been widely reported due to their advantages in process complexity, thermal management, and current flow capability.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Jiao

Chen

et al. 2022

Materials

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In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga2O3 heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm2 and 6.2 mΩ·cm2, breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm−2 and 88 MW·cm−2, respectively. Besides, both devices exhibit a current on/off ratio of more than 1010. This shows the prospect of MOCVD in power device manufacture.

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Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth

Polyakov,

Lee,

Nikolaev

et al. 2023

Adv Materials Inter

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The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface.

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MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Cited by 30 publications

References 43 publications

Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth

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MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Cited by 30 publications

References 43 publications

Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

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Product

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Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth