Model of Pocket-Implant Mosfets for Circuit Simulation

Temperature-independence-point properties for 0.1 μm-scale pocket-implant technologies and the impact on circuit design

“…Since the TIP-variation as a function of L g is undesirable for circuit design, we have analyzed the TIP properties of a ringoscillator together with those of n-and p-MOSFETs by measurements and simulation for a 0.1µm-scale CMOS technology with pocket-implants [3]. We report here that the origin of the TIP variation with L g is a different temperature-dependence of n-and p-MOSFETs as a function of L g .…”