2007 IEEE International Conference on Integrated Circuit Design and Technology 2007
DOI: 10.1109/icicdt.2007.4299577
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Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories

Abstract: Experimental thermal neutron and alpha soft error test results of a 4 Mbit SRAM fabricated on a 0.25 gm process are evaluated using Vanderbilt University's RADSAFE toolkit. The capabilities of the radiation transport code are demonstrated by accurately reproducing experimental results and predicting operational soft error rates for the memory.

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