Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors

Klipstein, P. C.; Livneh, Y.; Glozman, A.; Grossman, Steven H.; Klin, O.; Snapi, N.; Weiss, Eliezer

doi:10.1007/s11664-014-3169-3

Cited by 87 publications

(40 citation statements)

References 14 publications

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“…In this system, the electrons and holes are spatially separated in the two layers (InAs or InAsSb) so that the recombination is supposed to be drastically reduced. Experimental values around 400ns has been reported for undoped material [ 8 ], decreasing with doping level, which is significantly higher than the preceding values, but it appears that this carrier separation drastically reduce the optical absorption of the material, driving to a priori weak QEs [ 9 ]. Back to HgCdTe, this material may be grown with different growth methods: liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE).…”

Section: Icso 2014mentioning

confidence: 94%

“…The question of the SL material might be discussed in details to ensure both a high 6 and a large enough thickness. In some SL structure, the anisotropy of the material is such that diffusion length perpendicular to the SL layer is weaker than the in-plane diffusion resulting in a weaker QE [ 23 ]. However, the question of the collection efficiency (item b) is more complex as it is strongly depends on the diode technology and structure.…”

Section: Narrow Gap Structures (Diodes and Barriodes)mentioning

confidence: 99%

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Discussion about photodiode architectures for space applications

Gravrand

Destéfanis

Cervera

et al. 2017

International Conference on Space Optics — ICSO 2014

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Section: Icso 2014mentioning

confidence: 94%

Section: Narrow Gap Structures (Diodes and Barriodes)mentioning

confidence: 99%

Discussion about photodiode architectures for space applications

Gravrand

Destéfanis

Cervera

et al. 2017

International Conference on Space Optics — ICSO 2014

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“…This allows us to design the superlattices inside the structure correctly, prior to MBE growth. The simulation is based on a k · p treatment and optical transfer matrix (OTM) calculation recently reported elsewhere 7 . While the OTM technique is fairly standard, the k · p treatment contains a number of innovations 8 .…”

Section: Design and Performance Of T2sl Barrier Devicesmentioning

confidence: 99%

Long Wave Infrared Type II Superlattice Focal Plane Array Detector

Klipstein¹,

Avnon²,

Benny³

et al. 2017

Def. Sc. Jl.

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The XBn/XBp family of barrier detectors enables diffusion limited dark currents comparable with HgxCd1-xTe Rule-07 and high quantum efficiencies. SCD’s XBp type II superlattice (T2SL) detector contains InAs/GaSb and InAs/AlSb T2SLs, and was designed for the long wave infrared (LWIR) atmospheric window using k · p based modeling of the energy bands and photo-response. Wafers are grown by molecular beam epitaxy and are fabricated into focal plane array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridisation, under-fill, and back-side polishing. The 640 × 512 pixel, 15 μm pitch, detector goes by the name of ‘Pelican-D LW’ and exhibits a quantum efficiency of ~ 50 per cent with background limited performance at an operating temperature of 77 K. It has a cut-off wave length of ~ 9.5 μm, with a pixel operability of above 99 per cent. The detector gives a very stable image with a residual non uniformity of below 0.04 per cent over its useful dynamic range. A new digital read-out integrated circuit has been designed so that the complete detector closely follows the configuration of SCD’s MWIR Pelican-D detector.

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“…16 Despite this fact, Ga-Free detector performances have not proved to be superior to InAs/GaSb detectors. 17,18 For a better understanding of the impact of the GaSb content, we have recently studied the influence of the InAs/ GaSb SL period composition and the thickness on the material and device properties. 19,20 We found that the SL period mainly composed of GaSb (hereto referred to as "GaSbrich") has a higher current density than the SL structure mainly composed of InAs ("InAs-rich") having the same cut-off wavelength of 5 lm at 77 K. The current density difference between these MWIR structures is extremely large with almost a factor of 50.…”

Section: Introductionmentioning

confidence: 99%

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

Delmas

Rodriguez

Rossignol

et al. 2016

Journal of Applied Physics

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GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown material quality, is usually attributed to the presence of defects due to Ga-related bonds, limiting the SL carrier lifetime. By analyzing the photoresponse spectra of reverse-biased photodiodes at 80 K, we have highlighted the presence of an electric field, breaking the minibands into localized Wannier-Stark states. Besides the influence of defects in such GaSb-rich SL structures, this electric field induces a strong tunneling current at low bias which can be the main limiting mechanism explaining the high dark current density of the GaSb-rich SL diode.

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Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors

Cited by 87 publications

References 14 publications

Discussion about photodiode architectures for space applications

Discussion about photodiode architectures for space applications

Long Wave Infrared Type II Superlattice Focal Plane Array Detector

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

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