2022 IEEE Applied Power Electronics Conference and Exposition (APEC) 2022
DOI: 10.1109/apec43599.2022.9773778
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Modeling Substrate Voltage Effects on GaN I-V Characteristics with ASM-HEMT model

Sourabh Khandelwal
1
,
Gordon Stecklein
2
,
T. B. Herman
3
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Cited by 4 publications
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References 12 publications
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Digital Twin for Gate-Resistor Optimization of Parallel, 100 V, 7 mΩ, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models

Koch,
Nuzzo,
Weiser
et al. 2023
2023 IEEE Design Methodologies Conference (DMC)
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Digital Twin for Gate-Resistor Optimization of Parallel, 100 V, 7 mΩ, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models

Koch,
Nuzzo,
Weiser
et al. 2023
2023 IEEE Design Methodologies Conference (DMC)
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0
0
0
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Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design

Timothe,
Marco,
Michael
2023
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
2
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Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model

Li,
Wu,
Li
et al. 2024
IEEE J. Electron Devices Soc.
1
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