Modelling and simulation of effects of the content of Zn and the thickness of CdZnTe on the performance of Au/CdZnTe/glass radiation detector using Silvaco TCAD

Zhang, Y.; Wang, L.; Qin, Kaifeng; Xu, Run; Lai, Jianming; Huang, Jingshi; Zhang, J.; Min, Jiahua; Xia, Yiben

doi:10.1179/1432891715z.0000000001906

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Cited by 2 publications

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“…Thus far, significant efforts have been devoted to simulation modeling and device design employing CdZnTe materials for their application in specific technology. [42][43][44][45][46] Consequently, frontier research has been undertaken employing CdZnTe thin films as the absorber layer in single-junction and multi-junction solar cells. Herein, a comprehensive review is presented on CdZnTe thin films together with their potential applications in the corresponding photovoltaic device technologies.…”

Section: Introductionmentioning

confidence: 99%

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Sharma,

Chuhadiya,

Kamlesh

et al. 2023

Energy Adv.

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Section: Introductionmentioning

confidence: 99%

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Sharma,

Chuhadiya,

Kamlesh

et al. 2023

Energy Adv.

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Improvement of X-ray response of CZT films by post-annealing

Wei,

Cao,

Zha

et al. 2024

Surface Engineering

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CdZnTe (CZT) epitaxial films are promising for X-ray flat panel detectors due to their ability for large area fabrication, high absorption efficiency, and excellent detective quantum efficiency (DQE). However, challenges like image lag, ghosting, and reduced DQE due to long response times and high dark currents persist. This study introduces a novel post-in-situ annealing technique to enhance CZT film sensitivity and transient response. Results show that a brief 20 s annealing treatment increased surface Zn content, raising detector resistivity from 3.5 × 109 Ω·cm to 3.3 × 1010 Ω·cm while reducing leakage current at high voltages. This treatment also significantly reduced surface defects, improving CZT film detectors’ X-ray response time. Moreover, the electrons mobility-lifetime product (μτ)e improved from 2.30 × 10−5 cm2/V to 2.17 × 10−4 cm2/V, indicating enhanced charge carrier dynamics crucial for high-speed X-ray detection. Notably, the X-ray response sensitivity achieved a commendable 126 μC G−1· cm−2 a bias of 30 V. In conclusion, in-situ annealing represents a remarkable step forward in the development of CZT technology for X-ray flat panel imaging, addressing critical issues and potentially broadening its applications in medical and industrial imaging systems.

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Modelling and simulation of effects of the content of Zn and the thickness of CdZnTe on the performance of Au/CdZnTe/glass radiation detector using Silvaco TCAD

Cited by 2 publications

References 7 publications

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

Improvement of X-ray response of CZT films by post-annealing

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