Modulated crystallization and enhanced stable of high efficient perovskite solar cells with Pb(Ac)2

Chen, Lei; Liu, Tianxiao; Yu, Heng; Zhang, Zhifang; Qin, Chaochao; Zhang, Na; Yu, Liang; Yang, Feng; Song, Guilin; Li, Yong

doi:10.1016/j.jallcom.2023.168924

Cited by 8 publications

(5 citation statements)

References 68 publications

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“…Moreover, t 1; 2 and A 1, 2 are the lifetime and corresponding weighted amplitude of fast and slow decay processes, respectively. [33,34] The t 1; 2 and A 1, 2 of CsSnI 3 are 1.81 ns, 0.69 ns, 0.19 and 0.81 respectively, which makes the average lifetime (� t) of the CsSnI 3 film reach 1.12 ns (Table S1), close to those reported in the literatures. [21,35] However, once Ge is incorporated (i. e., CsSn 0.75 Ge 0.25 I 3 ), t 1 is significantly reduced to 0.20 ns, while t 2 is increased to 1.06 ns.…”

Section: Resultssupporting

confidence: 81%

“…In the formula, I represents the PL intensity and I 0 is a constant. Moreover,

{{\tau }_{1,\ 2}}

and A 1, 2 are the lifetime and corresponding weighted amplitude of fast and slow decay processes, respectively [33,34] . The

{{\tau }_{1,\ 2}}

and A 1, 2 of CsSnI 3 are 1.81 ns, 0.69 ns, 0.19 and 0.81 respectively, which makes the average lifetime (

{\bar{\tau }}

) of the CsSnI 3 film reach 1.12 ns (Table S1), close to those reported in the literatures [21,35] .…”

Section: Resultsmentioning

confidence: 99%

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Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Li,

Ye,

Yang

et al. 2024

Eur J Inorg Chem

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A new Sn‐Ge co‐alloy perovskite that does not contain toxic Pb is attracting attention due to its excellent predicted optoelectronic properties. However, most current research only focuses on compositions with Ge content up to 50%, resulting in a limited overall understanding on this material system. In this study, CsSn1‐xGexI3 (0 ≤ x ≤ 1) perovskite thin films were fabricated using spin coating method and characterized in terms of crystallographic, morphological and optical characteristics systematically. The results show that the Ge incorporation causes lattice shrinkage and a change in the crystallographic phase from orthorhombic to trigonal. Additionally, the coverage varies much as Ge increases. The Ge incorporation also results in a blueshift of the photoluminescence peak and a decrease in luminescence intensity as compared to the composition with lower Ge content. Moreover, the carrier dynamics measurement shows that the Ge incorporation increases the carrier nonradiative recombination. This work provides important hints for the development of the Sn‐Ge alloy‐based perovskite solar cell.

show abstract

Section: Resultssupporting

confidence: 81%

“…In the formula, I represents the PL intensity and I 0 is a constant. Moreover,

{{\tau }_{1,\ 2}}

and A 1, 2 are the lifetime and corresponding weighted amplitude of fast and slow decay processes, respectively [33,34] . The

{{\tau }_{1,\ 2}}

and A 1, 2 of CsSnI 3 are 1.81 ns, 0.69 ns, 0.19 and 0.81 respectively, which makes the average lifetime (

{\bar{\tau }}

) of the CsSnI 3 film reach 1.12 ns (Table S1), close to those reported in the literatures [21,35] .…”

Section: Resultsmentioning

confidence: 99%

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Li,

Ye,

Yang

et al. 2024

Eur J Inorg Chem

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show abstract

“…These XRD patterns are well matched with the α ‐FAPbI 3 standard XRD card (JCPDS‐00–069–0999). [ 44 ] This result indicated that α ‐phase FAPbI 3 was successfully obtained on NiO x HTL. Besides, the target2 film showed higher peak intensity compared to the target1 sample.…”

Section: Resultsmentioning

confidence: 88%

Stabilization of α‐phase FAPbI₃ via Buffering Interfacial Region for Efficient p–i–n Perovskite Solar Cells

Huang

Wang

Liu

et al. 2023

Adv Funct Materials

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Formamidinium lead triiodide (FAPbI3) with an ideal bandgap and good thermal stability has received wide attention and achieved a record efficiency of 26% in n–i–p (regular) perovskite solar cells (PSCs). However, imperfect FAPbI3 formation on the typical hole transport layer (HTL), high interfacial trap‐state density, and unfavorable energy alignment between the HTL and FAPbI3 result in the inferior photovoltaic performance of p–i–n (inverted) PSCs with FAPbI3 absorber. Herein, the α‐phase FAPbI3 is stabilized by constructing a buffer interface region between the NiOx HTL and FAPbI3, which not only diminishes NiOx/FAPbI3 interfacial reactions and defects but also facilitates carrier transport. Upon the construction of a buffer interface region, FAPbI3 inverted PSC exhibits a high‐power conversion efficiency of 23.56% (certified 22.58%) and excellent stability, retaining 90.7% of its initial efficiency after heating at 80 °C for 1000 h and 84.6% of the initial efficiency after operating at the maximum power point under continuous illumination for 1100 h. Besides, as a light‐emitting diode device, the FAPbI3 inverted PSC can be directly lit with an external quantum efficiency of 1.36%. This study provides a unique and efficient strategy to advance the application of α‐phase FAPbI3 in inverted PSCs.

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Section: Resultsmentioning

confidence: 99%

“…Ordinarily, the enhancement of crystallinity indicates that the atomic arrangement in the crystal structure is more regular and the variation range of crystal face spacing and cell size is modest, [28] confirming that the epitaxial nucleation and growth strategy could effectively decrease the content of the defects in the NaFeHCF. [29][30][31] The chemical compositions of the as-prepared NaFeHCF and NaFeHCF@rGO are estimated by EA, ICP-OES (Table S3, Supporting Information) and TGA (Figure S3). [32,33] As such, the H 2 O contents in NaFeHCF and NaFeHCF@rGO analyzed by TGA are ≈13 wt% within the temperature range of 30 to 280°C.…”

Section: Figure 4amentioning

confidence: 99%

Epitaxial Nucleation of Na_xFeFe(CN)₆@rGO with Improved Lattice Regularity as Ultrahigh‐Rate Cathode for Sodium‐Ion Batteries

Tang,

Wang,

et al. 2024

Advanced Energy Materials

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Although Prussian blue analogues are the promising candidate cathode materials for the Na‐ion batteries for the grid storage due to 3D open‐framework structure and large interstitial “A” sites, high content of defects in the crystals obtained in the conventional strategy severely impede Na+ migration, leading to an unsatisfactory power density. Here a novel epitaxial nucleation‐assisted controlled crystallization approach to eliminate the structural defects of NaFeHCF crystals is reported. Due to their limited lattice misfit of only 4.87% (< 5%) between the graphene and NaFeHCF as well as the electronegativity of the functional groups (─COOH, ─OH, ─CH(O)CH─), GO can act as the nucleation and subsequent epitaxial growth platform of NaFeHCF, which results in a unique one‐corner‐cut cubic nano‐crystals morphologies with much decreased contents of defects (0.08 per formula unit). This enhanced lattice regularity significantly enhanced the speedy diffusion of Na cations (by 5 times) in the nanocrystals, resulting in the unprecedented rate capability of 96.8 mAh g−1 at an ultra‐high rate of 9 A g−1 (39 s, 23228 W kg−1), which is far exceeding that of any previously reported PBA‐based cathodes to the knowledge, authenticating its superiority as a candidate for high‐power sodium‐ion batteries for the reliable grid energy storage.

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Modulated crystallization and enhanced stable of high efficient perovskite solar cells with Pb(Ac)2

Cited by 8 publications

References 68 publications

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Stabilization of α‐phase FAPbI₃ via Buffering Interfacial Region for Efficient p–i–n Perovskite Solar Cells

Epitaxial Nucleation of Na_xFeFe(CN)₆@rGO with Improved Lattice Regularity as Ultrahigh‐Rate Cathode for Sodium‐Ion Batteries

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Modulated crystallization and enhanced stable of high efficient perovskite solar cells with Pb(Ac)2

Cited by 8 publications

References 68 publications

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn−Ge Co‐alloy Perovskite Thin Films by Spin Coating

Stabilization of α‐phase FAPbI3 via Buffering Interfacial Region for Efficient p–i–n Perovskite Solar Cells

Epitaxial Nucleation of NaxFeFe(CN)6@rGO with Improved Lattice Regularity as Ultrahigh‐Rate Cathode for Sodium‐Ion Batteries

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Stabilization of α‐phase FAPbI₃ via Buffering Interfacial Region for Efficient p–i–n Perovskite Solar Cells

Epitaxial Nucleation of Na_xFeFe(CN)₆@rGO with Improved Lattice Regularity as Ultrahigh‐Rate Cathode for Sodium‐Ion Batteries