Modulation of contact types and Schottky barrier in Ti3C2T2/TiSi2N4 (T = O or OH) van der Waals heterostructures by biaxial strain and external electric field

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Modulation of contact types and Schottky barrier in Ti3C2T2/TiSi2N4 (T = O or OH) van der Waals heterostructures by biaxial strain and external electric field

Cited by 4 publications

References 52 publications

Mechanistic insights into the electrical properties of Ti3C2T2/WS2 (T = F, O, OH) interfaces tuned by functional groups

Mechanistic insights into the electrical properties of Ti3C2T2/WS2 (T = F, O, OH) interfaces tuned by functional groups

Two-dimensional MoSTe/MSi2N4 (M = Mo, W) van der Waals heterojunctions for photocatalytic water-splitting: A first-principles study

A first-principles study of Ti2B2T2/MoSi2N4 (T = F, O, OH) van der Waals heterostructures: Response characteristics to external electric field and uniaxial strain

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