Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

Chen, Zhiyi; Garcia, Thor; Jesús, Joel De; Zhao, Lukas; Deng, Haiming; Secor, Jeff; Begliarbekov, Milan; Krusin‐Elbaum, L.; Tamargo, M. C.

doi:10.1007/s11664-013-2890-7

Cited by 28 publications

(29 citation statements)

References 32 publications

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“…The roughness of the sample is found to be 2.0 nm which is slightly higher than the roughness value analyzed from XRR measurements. This value of roughness is comparable to other Bi 2 Se 3 thin films prepared by MBE on GaAs (100) substrate . In order to study the chemical composition of the Bi 2 Se 3 thin film EDX was performed on the Bi 2 Se 3 thin film and the spectra is shown in Figure (d).…”

Section: Parameters Used To Get the Best Fit Of The Xrr Data For The supporting

confidence: 87%

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Singh

Jena

Samanta

et al. 2018

Physica Rapid Research Ltrs

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Spintronics exploiting pure spin current in ferromagnetic (FM)/heavy metals (HM) is a subject of intense research. Topological insulators having spin momentum locked surface states exhibit high spin–orbit coupling and thus possess a huge potential to replace the HM like Pt, Ta, W, etc. In this context, the spin pumping phenomenon in Bi2Se3/CoFeB bilayers has been investigated. Bi2Se3 thin films are fabricated by electron beam evaporation method on Si (100) substrate. In order to confirm the topological nature of Bi2Se3, low temperature magnetotransport measurement on a 30 nm thick Bi2Se3 film which shows 10% magnetoresistance (MR) at 1.5 K has been performed. A linear increase in MR with applied magnetic field indicates the presence of spin momentum‐locked surface states. A voltage has been measured at room temperature to quantify the spin pumping which is generated via inverse spin Hall effect (ISHE). For the separation of spin rectification effects mainly produced by the FM CoFeB layer, in plane angular dependence of the dc voltage with respect to applied magnetic field has been measured. Our analysis reveals that spin pumping induced ISHE is the dominant contribution in the measured voltage.

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Section: Parameters Used To Get the Best Fit Of The Xrr Data For The supporting

confidence: 87%

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Singh

Jena

Samanta

et al. 2018

Physica Rapid Research Ltrs

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“…Adjacent Te layers are weakly bonded across the van der Waals gap. Several studies have reported the growth of high‐quality, single crystalline thin films by molecular beam epitaxy (MBE) on single‐crystalline substrates, for example, Si, Al 2 O 3 , GaAs, and lattice‐matched InP to name a few, as well as amorphous SiO 2 /Si for back‐gated electrical transport measurements …”

Section: Growth and Structural Properties Of Re Doped (Bisb)2(sete)mentioning

confidence: 99%

Rare Earth Doping of Topological Insulators: A Brief Review of Thin Film and Heterostructure Systems

Hesjedal

2019

Physica Status Solidi (a)

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Magnetic topological insulators (MTIs) are a novel materials class in which a topologically nontrivial electronic band structure coexists with long-range ferromagnetic order. The ferromagnetic ground state can break time-reversal symmetry, opening a gap in the topological surface states whose size is dependent on the magnitude of the magnetic moment. Doping with rare earth ions is one way to introduce higher magnetic moments into a material, however, in Bi 2 Te 3 bulk crystals, the solubility limit is only a few percent. Using molecular beam epitaxy for the growth of doped (Sb,Bi) 2 (Se,Te) 3 TI thin films, high doping concentrations can be achieved while preserving their high crystalline quality. The growth, structural, electronic, and magnetic properties of Dy, Ho, and Gd doped TI thin films will be reviewed. Indeed, high magnetic moments can be introduced into the TIs, which are, however, not ferromagnetically ordered. By making use of interfacial effects, magnetic long-range order in Dy doped Bi 2 Te 3 , proximity-coupled to the MTI Cr:Sb 2 Te 3 , has been achieved. Clearly, engineered MTI heterostructures offer new possibilities that combine the advantageous properties of different layers, and thus provide an ideal materials platform enabling the observation new quantum effects at higher temperatures.

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“…The surface morphology, RMS roughness and size of the triangular domains are comparable to films grown on sapphire by MBE. 9 However, the lowest electron concentration obtained (~6.7x10 19 cm -3 ) results in a sheet carrier concentration of 2.2x10 14 cm -2 which is an order of magnitude higher than that reported for Bi 2 Se 3 films of comparable thickness grown by MBE 10,11 or hybrid physical-chemical vapor deposition (HPCVD) 12 which exhibit sheet carrier concentrations in the range of 0.6-3.0x10 13 cm -3 . This difference suggests that the Se/Bi ratio obtainable by MOCVD using DMSe and TMBi precursors is not sufficiently high to reduce the Se vacancy concentration in the layers.…”

Section: Se/bi Ratiomentioning

confidence: 65%

Metalorganic chemical vapor deposition of Bi₂Se₃thin films for topological insulator applications

Brom

Redwing

2014

SPIE Proceedings

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The growth of thin Bi 2 Se 3 films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (<250 o C). Epitaxial Bi 2 Se 3 films with (006) x-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of ~6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi 2 Se 3 films with a room temperature electron concentration of 6.7x10 19 cm -3 and mobility of 155 cm 2 /Vs were obtained at 200 o C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi 2 Se 3 and related materials for topological insulator studies.

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Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

Cited by 28 publications

References 32 publications

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Rare Earth Doping of Topological Insulators: A Brief Review of Thin Film and Heterostructure Systems

Metalorganic chemical vapor deposition of Bi₂Se₃thin films for topological insulator applications

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Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

Cited by 28 publications

References 32 publications

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi2Se3 Thin Film

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi2Se3 Thin Film

Rare Earth Doping of Topological Insulators: A Brief Review of Thin Film and Heterostructure Systems

Metalorganic chemical vapor deposition of Bi2Se3thin films for topological insulator applications

Contact Info

Product

Resources

About

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi₂Se₃ Thin Film

Metalorganic chemical vapor deposition of Bi₂Se₃thin films for topological insulator applications