Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers

Abstract

Articles you may be interested inStudy of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxyThe molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300°C and 400°C, producing In-terminated InSb͑111͒-A surfaces on CaF 2 /Si͑111͒ substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm 2 /V s for an 8-m-thick InSb layer grown on CaF 2 /Si͑111͒. On CaF 2 /Si͑001͒ substrates, the InSb layers grew in the ͑111͒ orientation with two domains 90°apart. These InSb layers and ones grown on BaF 2 /CaF 2 /Si͑111͒ substrates exhibited inferior electrical and structural properties compared to structures grown on CaF 2 /Si͑111͒ substrates.

III-V infrared detectors on Si substrates

“…34,36,[38][39][40][41][42][43][44][45][46][47][48][49][50][51] In most ofthe studies, a GaAs buffer layer was used to improve the material quality. Chyi …”

Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

“…Figure 1 1 shows the current-voltage and differential resistance characteristics ofthe i-InAsSb/p-Si diode structure at near room temperature. The current density is given by [17] J = Jo exp(qV I nkT){1 -exp(-qV I kT)} (7) where n is the ideality factor and J0 is given by Jo = A *7'2 exp{-qq, kT} (8) where A** is the Richardson coefficient and 4is the effective barrier height. For values of V greater than 3kT/q, Eq (7) can be written in the simpler form J = JO exp(q v I nkT) (9) so the plot of ln(I) vs V curve in the forward direction should give a linear portion.…”

“…Even though there has been significant research effort on the growth of InSb alloys on GaAs substrates, growth ofthese alloys directly on Si substrates has not been actively pursued because ofthe difficulties associated with the large lattice mismatch (-49% @300K), different thermal expansion coefficients (alnSb 2aSj 300K), and antiphase domain (APD) formation (jolar on nonpolar growth for (001) and (1 11) orientation). Despite these challenges, some groups have achieved heteroepitaxy of lnSb on Si substrates with and without buffer layers [6,7].…”

Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

“…7 Some problems have been eliminated by the use of tilted substrates, 8 indium pre-deposition and the insertion of various buffer layers. [9][10][11] In our paper we describe, in detail, the growth of InSb on both GaAs (001) and Si (001) using molecular-beam epitaxy (MBE), and we compare the growth and properties of the resulting InSb films. Specific aspects of our techniques include the incorporation of a low-temperature InSb buffer (for the GaAs substrate), introduction of a GaSb/AlSb superlattice buffer, and the use of a misoriented substrate (for the Si substrate) to restrain the formation of dislocations generated by the lattice mismatch.…”