IEEE Trans. Electron Devices
 1982
DOI: 10.1109/t-ed.1982.20837
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Monolithic dual-gate GaAs FET digital phase shifter

J.L. Vorhaus
1
,
R.A. Pucel
2
,
Yusuke Tajima
3
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Cited by 6 publications
(1 citation statement)
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“…PIN diodes are also used as varactors in analog phase shifters, as are FETs in amplifier-type phase shifters. Dual-gate FETs [8] have become popular in analog phase shifters because a single device can both amplify and switch a signal; essentially they are dc-gain-controlled microwave amplifiers and phase shifters. PIN Diodes.…”
Section: Introductionmentioning
confidence: 99%

<title>Comparative study for bolometric and nonbolometric switching elements for microwave phase shifters</title>

Tabib‐Azar
1
,
Bhasin
2
,
Romanofsky
3
1991
SPIE Proceedings
0
0
0
0
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“…PIN diodes are also used as varactors in analog phase shifters, as are FETs in amplifier-type phase shifters. Dual-gate FETs [8] have become popular in analog phase shifters because a single device can both amplify and switch a signal; essentially they are dc-gain-controlled microwave amplifiers and phase shifters. PIN Diodes.…”
Section: Introductionmentioning
confidence: 99%

<title>Comparative study for bolometric and nonbolometric switching elements for microwave phase shifters</title>

Tabib‐Azar
1
,
Bhasin
2
,
Romanofsky
3
1991
SPIE Proceedings
0
0
0
0
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Ausblick: Monolithisch integrierte Schaltungen auf GaAs

Kellner1,
Kniepkamp2
1985
GaAs-Feldeffekttransistoren
2
0
3
0
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Beam-forming module for backhaul link in a Relay-aided 4G network

Petropoulos
1
,
Voudouris
2
,
Abd‐Alhameed
3
et al. 2015
AEU - International Journal of Electronics and Communications
2
0
0
0
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