2008 International Conference on Microwave and Millimeter Wave Technology 2008

DOI: 10.1109/icmmt.2008.4540332

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Monolithic integrated coplanar oscillator 90GHz with silicon IMPATT diode

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Cited by 4 publications

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“…Performance of the fabricated 94 GHz waveguide VCO in this paper shows better compared with the recent achievements as listed in Table II. 10,15)…”

Section: Discussionmentioning

confidence: 99%

Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar

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et al. 2010

Jpn. J. Appl. Phys.

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In this work, we have designed and fabricated the GaAs Gunn diodes for a 94 GHz waveguide voltage controlled oscillator (VCO) which is one of the important parts in a frequency modulated continuous wave (FMCW) radar application. For fabrication of the high power GaAs Gunn diodes, we adopted a graded gap injector which enhances the output power and conversion efficiency by effectively removing the dead-zone. We have measured RF characteristics of the fabricated GaAs Gunn diodes. The operating current, oscillation frequency, and output power of the fabricated GaAs Gunn diodes are presented as a function of the anode diameters. The operating current increases with anode diameters, whereas the oscillation frequency decreases. The higher oscillation frequency was obtained from 60 µm anode diameters of the fabricated Gunn GaAs diodes and higher power was obtained from 68 µm. Also, for application of the 94 GHz FMCW radar system, we have fabricated the 94 GHz waveguide VCO. From the fabricated GaAs Gunn diodes of anode diameter of 60 µm, we have obtained the improved VCO performance.

“…Performance of the fabricated 94 GHz waveguide VCO in this paper shows better compared with the recent achievements as listed in Table II. 10,15)…”

Section: Discussionmentioning

confidence: 99%

Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar

¹

,

²

,

³

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this work, we have designed and fabricated the GaAs Gunn diodes for a 94 GHz waveguide voltage controlled oscillator (VCO) which is one of the important parts in a frequency modulated continuous wave (FMCW) radar application. For fabrication of the high power GaAs Gunn diodes, we adopted a graded gap injector which enhances the output power and conversion efficiency by effectively removing the dead-zone. We have measured RF characteristics of the fabricated GaAs Gunn diodes. The operating current, oscillation frequency, and output power of the fabricated GaAs Gunn diodes are presented as a function of the anode diameters. The operating current increases with anode diameters, whereas the oscillation frequency decreases. The higher oscillation frequency was obtained from 60 µm anode diameters of the fabricated Gunn GaAs diodes and higher power was obtained from 68 µm. Also, for application of the 94 GHz FMCW radar system, we have fabricated the 94 GHz waveguide VCO. From the fabricated GaAs Gunn diodes of anode diameter of 60 µm, we have obtained the improved VCO performance.

Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios

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et al. 2016

2016 46th European Solid-State Device Research Conference (ESSDERC)

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Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design

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et al. 2015

2015 German Microwave Conference

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