Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

Satô, Kenji; Wakita, Koichi; Kotaka, I.; Kondo, Y.; Yamamoto, Makoto; Takada, Atsushi

doi:10.1063/1.113059

Cited by 91 publications

(10 citation statements)

References 15 publications

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“…This method has the advantage of only requiring a one step epitaxial growth, but the final structure is usually very nonplanar with deep groves ( 1 m). Another method to produce a blue shift entails removing the active region and regrowing higher bandgap material [41]. This method allows for large bandgap differences between the laser and the modulator, but precise growth control is required to match the waveguides and to prevent coupled-cavity effects between the sections.…”

Section: A Lasers With Integrated Electroabsorption Modulatorsmentioning

confidence: 99%

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

Coleman

Lammert

Osowski

et al. 1997

IEEE J. Select. Topics Quantum Electron.

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The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH's) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LED's).

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Section: A Lasers With Integrated Electroabsorption Modulatorsmentioning

confidence: 99%

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

Coleman

Lammert

Osowski

et al. 1997

IEEE J. Select. Topics Quantum Electron.

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“…Ideally, the OTDM pulse source should be a monolithic device that does not consist of external components [39,41,43,44]. Such a source would be more compact, permit reduced cost in fabricating a number of devices, and not have the mechanical instabilities associated with bulk optical elements.…”

Section: Monolithic Mode-locked Lasermentioning

confidence: 99%

Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission

2005

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Semiconductor mode-locked lasers are evaluated as pulse sources for high bit rate data transmission. This chapter describes the requirements of OTDM sources for high bit rate data transmission, compares various OTDM source technologies, describes three semiconductor mode-locked laser cavity designs, explains the impact of timing jitter and amplitude noise on OTDM performance, illustrates how to characterize noise of OTDM sources using rf and optical techniques, shows how to interpret the noise measurements, and finally discusses semiconductor mode-locked laser cavity optimizations that can achieve low noise performance.A critical part of the design of a communication system is the choice of the transmitter or source laser. High bit rate optical time-division multiplexed (OTDM) systems in particular demand reliable short pulse generation at high repetition rates and turn-key operation. Semiconductor mode-locked lasers are becoming increasingly attractive and viable for such applications.Semiconductor mode-locked lasers can be compact sources of picosecond, highrepetition rate pulses of light at the popular telecommunication wavelength of 1.5 μm [1,2]. Recent advances in semiconductor processing and cavity design have led to the advent of ultra-stable [3] and ultralow-noise [4,5] performance. With proper temperature control of the semiconductor device and a clean electric supply for the bias and injection current, the diode can remain mode-locked for days. Single-channel, singlepolarization transmission rates up to 160 Gb/s [6] have been successfully demonstrated using mode-locked semiconductor lasers, and detailed characterization of their noise

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“…29). 212,367 Microprobe modification of XPS (sometimes referred to as`Super-ESCA') is actively used for characterisation of minute amounts of hardly accessible or hazardous substances. For instance, an XPS study of curium oxide available in the amount of *1 mg has been performed at the ALS synchrotron radiation centre (Berkley, USA).…”

Section: Studies With High Spatial Resolutionmentioning

confidence: 99%

X-Ray synchrotron radiation in physicochemical studies

Zubavichus¹,

Slovokhotov²

2001

Russ. Chem. Rev.

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Modern modifications of the conventional X-ray meth-Modern modifications of the conventional X-ray methods of physicochemical analysis (X-ray and electron spectroscopy, ods of physicochemical analysis (X-ray and electron spectroscopy, diffraction methods, diffraction methods, etc. etc.) and new combined techniques using) and new combined techniques using X-ray synchrotron radiation are considered. Unique character-X-ray synchrotron radiation are considered. Unique characteristics of synchrotron radiation are noted, namely, continuous istics of synchrotron radiation are noted, namely, continuous spectrum, exceptionally high intensity, polarisation, coherence, spectrum, exceptionally high intensity, polarisation, coherence, pulse nature, pulse nature, etc. etc. The key trends in the use of combined methods The key trends in the use of combined methods in chemistry and materials science including studies of substances in chemistry and materials science including studies of substances under extreme conditions, the study of rapid processes, studies under extreme conditions, the study of rapid processes, studies with high spatial resolution are discussed. The achievements in the with high spatial resolution are discussed. The achievements in the applications of synchrotron radiation are illustrated by examples applications of synchrotron radiation are illustrated by examples from various fields of chemistry and related sciences. The biblio-from various fields of chemistry and related sciences. The bibliography includes 405 references. graphy includes 405 references.. .

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Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

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Cited by 91 publications

References 15 publications

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission

X-Ray synchrotron radiation in physicochemical studies

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