Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

Abstract

Deposition at room temperature of Ga on Si(100) produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size (i.e., length) distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga∕Si(100) system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate. Disciplines Chemistry CommentsThis article is from Physical Review B 72 (2005) Deposition at room temperature of Ga on Si͑100͒ produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size ͑i.e., length͒ distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga/ Si͑100͒ system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate.

Heterogeneous nucleation and adatom detachment at one-dimensional growth of In onSi(100)−2×1

“…21. The unconventional shape of the scaled distribution function -monotonously decreasing -observed for 1D growth of Ga on Si(100) by Albao et al (and explained by means of KMC simulations using strongly anisotropic surface diffusion) 9 was theoretically investigated by Tokar and Dreyssé 11 . They showed that for equilibrium growth and a model with atomic interactions restricted to only nearest neighbors, the scaled distribution function is exponentially decreasing.…”

“…Similarly as in the model used by Albao et al 9 arrangement of atoms in chains into dimers is not taken into account.…”

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

“…A quick survey of the literature provides us with numerous examples: Mg/Si(557) 59 , Si/Si(001) 60 , Mn/Si(001) [61][62][63][64][65] , CoSi 2 /Si 66 , Ga/Si(001) [67][68][69][70] , Sr/Si(111) 71 and Sr/Si(001) 72 , Ag+Au/Si(557), 44 Ir/Si(001) 73 , and so on.…”

Influence of relaxation on the size distribution of monatomic Ag chains on the steps of a vicinal Pt surface

“…The self-assembly of such chains of varying lengths has been observed in some heteroepitaxial systems. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] From the point of view of applications, it would be desirable that the chains were of similar length and regularly spaced. Therefore, the understanding of the mechanisms which define the chain sizes and interchain spacings would be of considerable interest.…”