Monte Carlo Simulation of a Uniform Response Silicon X-ray Detector

Abstract

Abstract: X-ray semiconductor detectors do not show an equal responsiveness for different incident photon energies. Detector response is required to be independent from the energy especially for dose measurements in medical or nuclear safety applications. So the target of the project is to achieve an energy independent response of the silicon x-ray detector. The active area of the silicon detector is partly covered with a brass plate featuring a round hole with a thin aluminum foil. The diameter has to be optimized to achieve an energy independent response of the detector. Monte Carlo simulation toolkit Geant4 is used to model the structure, matter and physical properties of the device. Silicon detector has a surface area of 10 mm x 10mm and about 500 um thick. Brass plate with thickness of 1.8 mm and round hole is mounted on top of it. X-ray photons with energies in different steps between 50 keV and 150 keV are used in the simulation. Monte Carlo simulation results presented in this report determines the best possible energy independent response of the silicon x-ray detector.