Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions

Ashok, Ashwin; Vasileska, Dragica; Hartin, O.; Goodnick, Stephen M.

doi:10.1109/nano.2007.4601203

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…Many studies on wurtzite GaN drift velocity characteristics have been performed, particularly theoretical predictions using analytical band and full band MC models. The simulated results [6,9,13,[16][17][18][19][20][21][22][23][24][25][26][27][28] show great discrepancy from each other and from the data derived from experimental measurements as depicted in figure 2. Although the drift velocity measurements of [20] show a similar trend to the theoretical work, the experimental results of [9,29] show that the peak drift velocity and the drop of drift velocity in negative differential resistance (NDR) region are much smaller than that predicted from theoretical simulations.…”

Section: Introductionmentioning

confidence: 82%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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Section: Introductionmentioning

confidence: 82%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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“…This model has an energy band diagram similar to that of a MOSFET channel, with an injection barrier and a highly peaked lateral electric field, and includes impurity scattering and velocity overshoot, but the multi-dimensional potential gradients and confinement effects encountered in full device simulations are not present. This realistic 1D representation has thus been frequently used in the literature [20,[22][23][24] to study the transport phenomena in electronic devices in the primary direction of carrier transport-which fundamentally determine the device performance-in isolation from the complicating factors that arise in a full device simulation together with an increase in the computation time and cost. Moreover, while the MONET program employed in this study is able to simulate carrier transport in two-dimensional geometries, it does not incorporate a Poisson equation solver for the 2D mode.…”

Section: Methodsmentioning

confidence: 99%

“…Electron–electron interactions were first incorporated in the MC simulations of nitride devices by Ashok et al [ 23 ]. These interactions were found to cause the charge carriers to lose energy more rapidly near the drain contact of the device, compared to when they are not included in the scattering model.…”

Section: Introductionmentioning

confidence: 99%

A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices

2020

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The current electronics industry has used the aggressive miniaturization of solid-state devices to meet future technological demands. The downscaling of characteristic device dimensions into the sub-10 nm regime causes them to fall below the electron–phonon scattering length, thereby resulting in a transition from quasi-ballistic to ballistic carrier transport. In this study, a well-established Monte Carlo model is employed to systematically investigate the effects of various parameters such as applied voltage, channel length, electrode lengths, electrode doping and initial temperature on the performance of nanoscale silicon devices. Interestingly, from the obtained results, the short channel devices are found to exhibit smaller heat generation, with a 2 nm channel device having roughly two-thirds the heat generation rate observed in an 8 nm channel device, which is attributed to reduced carrier scattering in the ballistic transport regime. Furthermore, the drain contacts of the devices are identified as critical design areas to ensure safe and efficient performance. The heat generation rate is observed to increase linearly with an increase in the applied electric field strength but does not change significantly with an increase in the initial temperature, despite a marked reduction in the electric current flowing through the device.

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