Monte Carlo simulation of the induced signal in semi-insulating GaAs detectors

Abstract

We develop a Monte Carlo simulator of the charge signal induced by an external radiation on semi-insulating GaAs detectors. Trapping and detrapping processes and the dynamics of generated carriers are consistently accounted for. The relative contributions to the charge signal of fast- and slow-time components are found to depend significantly upon the applied voltage. Calculations provide a physical interpretation of experimental results.