Morphologies in anisotropic cluster growth: A Monte Carlo study on Ag(110)

Ferrando, Riccardo; Hontinfinde, F.; Levi, A.C.

doi:10.1103/physrevb.56.r4406

Cited by 46 publications

(41 citation statements)

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“…One example involves deposition of metal atoms on anisotropic fcc͑110͒ surfaces. 20,21 Here, strong bonding occurs only at the end of the metal rows which are the dominant aggregation sites for lower T. However, weak bonding occurs on the sides, so aggregation is not inhibited as for Ga/ Si͑100͒. Another example of 1D island formation is provided by Si͑100͒ homoepitaxy at low T. 22 However, the size distribution for these systems exhibits a conventional monomodal form rather than a monotonically decreasing form.…”

Section: Figmentioning

confidence: 99%

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

et al. 2005

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Deposition at room temperature of Ga on Si(100) produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size (i.e., length) distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga∕Si(100) system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate. Disciplines Chemistry CommentsThis article is from Physical Review B 72 (2005) Deposition at room temperature of Ga on Si͑100͒ produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size ͑i.e., length͒ distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga/ Si͑100͒ system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate.

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Section: Figmentioning

confidence: 99%

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

et al. 2005

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“…3. For Ag on Ag(110), there are strong attractions (E b ≈ 0.18 eV) between nearest-neighbor (NN) adatoms in the <110> direction along the rows, and weak attractions (E b ≈ 0.02 eV) between further separated NN adatoms in the orthogonal <001> direction across the rows [40]. See again Fig.…”

Section: Ag(110): Prototype For Anisotropic Growthmentioning

confidence: 91%

“…3. There is also anisotropy in diffusion, the in-channel direction being preferred (E d ≈ 0.28 eV) over the cross channel direction (E d ≈ 0.38 eV) [40]. Island growth shapes are highly-elongated quasi-1D in the direction of the channels at lower T ~ 175 K, partly reflecting the strongly anisotropic interactions [4,41,42].…”

Section: Ag(110): Prototype For Anisotropic Growthmentioning

confidence: 99%

“…Island growth shapes are highly-elongated quasi-1D in the direction of the channels at lower T ~ 175 K, partly reflecting the strongly anisotropic interactions [4,41,42]. A transition towards 2D growth shapes, which are still elongated but presumably closer to equilibrium, occurs above 200 K. KMC simulations of an appropriate anisotropic lattice-gas model have been performed by the Genova group [40,41], reproducing the above behavior (and also showing small, irregular, somewhat isotropic islands at low T ~ 140 K). Interestingly these studies show "intermixing" of aggregated atoms at higher T, i.e., the more-recentlydeposited atoms can end up embedded in the interior of elongated islands.…”

Section: Ag(110): Prototype For Anisotropic Growthmentioning

confidence: 99%

“…Interestingly these studies show "intermixing" of aggregated atoms at higher T, i.e., the more-recentlydeposited atoms can end up embedded in the interior of elongated islands. This implies significant detachment and reattachment [40]. Note that in isotropic systems, most edge atoms are multiply coordinated with at least 2 strong bonds and are thus effectively irreversibly incorporated.…”

Section: Ag(110): Prototype For Anisotropic Growthmentioning

confidence: 99%

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From Initial to Late Stages of Epitaxial Thin Film Growth: STM Analysis and Atomistic or Coarse-Grained Modeling

Evans¹,

Han²,

Ünal³

et al. 2010

AIP Conference Proceedings

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Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modelingwhich tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) Abstract. Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not ...

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Kinetic Monte Carlo study of self‐organization of low‐dimensional nanostructures on fcc (110) surfaces

Negulyaev¹,

Stepanyuk²,

Niebergall³

et al. 2010

Physica Status Solidi (b)

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Performing large-scale atomic simulations by means of kinetic Monte Carlo method we study room temperature selforganization of 3d magnetic atoms (Fe, Co) on fcc (110) surfaces (Pd(110), Cu(110)) in the sub-monolayer regime. The energetics of various diffusion processes relevant for these systems is investigated based on first principles calculations. We reveal that surface-confined atomic intermixing plays a significant role in the formation of nanostructures. Our results lead to the conclusion that the deposited species (Fe, Co) are captured into the topmost surface layer, while the ad-layer structure consists mainly of the expelled substrate atoms (Pd, Cu). Our studies shed a light on recent experimental investigations on the metal-on-metal growth on fcc (110) surfaces.

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Morphologies in anisotropic cluster growth: A Monte Carlo study on Ag(110)

Cited by 46 publications

References 28 publications

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

From Initial to Late Stages of Epitaxial Thin Film Growth: STM Analysis and Atomistic or Coarse-Grained Modeling

Kinetic Monte Carlo study of self‐organization of low‐dimensional nanostructures on fcc (110) surfaces

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