Morphology evolution of TiO2 nanotubes with additional reducing agent: Evidence of oxygen release

Yu, Mengshi; Huang, Wenqiang; Li, Puying; Zhang, Kun; Zhu, Xufei

doi:10.1016/j.elecom.2018.11.010

Cited by 10 publications

(1 citation statement)

References 27 publications

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“…Additionally, most of these anti-reflective coating solutions are expensive because they require vacuum technology, which could be problematic in mass production. To realize the enhanced absorption, micro-nano structures are employed to change the direction of light to reduce the reflection, and materials with special optical properties such as Si 3 N 4 [ 7 ], SiO 2 [ 8 ], TiO 2 [ 9 , 10 ] and GaAs [ 11 ] can interact with photons. The micro-nano structures that realize surface anti-reflection have various forms, most of the structures are derived from the moth-eye structure that was first discovered by Bernhard in nature [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Zhao

Zhang

et al. 2021

Micromachines

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We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating. The fabrication route combines the advantages of anisotropic wet etching and metal-assisted chemical etching. The former is employed to form inverted silicon pyramid arrays, while the latter is used to generate randomly distributed nanoholes on the surface and sidewalls of the generated inverted silicon pyramidal arrays. We demonstrate, numerically and experimentally, that such a structure facilitates the multiple reflection and absorption of photons. The resulting nanostructure can achieve the lowest reflectance of 0.45% at 700 nm and the highest reflectance of 5.86% at 2402 nm. The average reflectance in the UV region (250–400 nm), visible region (400–760 nm) and NIR region (760–2600 nm) are 1.11, 0.63 and 3.76%, respectively. The reflectance at broadband wavelength (250–2600 nm) is 14.4 and 3.4 times lower than silicon wafer and silicon pyramids. In particular, such a structure exhibits high hydrophobicity with a contact angle up to 132.4°. Our method is compatible with well-established silicon planar processes and is promising for practical applications of anti-reflectivity coating.

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