MOS-like electroluminescent devices using silicon-rich oxide obtained by LPCVD

Fernandez, Alfredo Abelardo Gonzalez; Aceves-Mijares, M.; Zhou, Yu; Morales–Sánchez, A.; Leyva, Karim Monfil

doi:10.1109/iceee.2009.5393314

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…Assuming the WS is biased at low voltage, and a low injection regime, jn current is expressed as (8): Absorbed photons with energy E ph greater than the band gap E g produce electron-hole pairs, the electric field inside the depletion region separates the pair, and a current I ph is established. If it is assumed that each absorbed photon generates one electron-hole pair, then the current corresponding to photons I ph under ideal conditions can be calculated with (6).…”

Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

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Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2022

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This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications.

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Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

“…In the past few years, the development of silicon light sources has advanced significantly, and integration of such devices into electrophotonic circuits has been demonstrated [3][4][5][6][7][8]. However, one of the major challenges to tackle remains the improvement of their relatively low light emission powers [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2022

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Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon

et al. 2020

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This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment.

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Blue Electroluminescence in SRO-HFCVD Films

et al. 2021

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In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

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MOS-like electroluminescent devices using silicon-rich oxide obtained by LPCVD

Abstract: Fig. 1. Schematic representation of the electro luminescent devices fabricated.Abstract --Silicon Rich Oxide (SRO) is a multiphase material composed by SiO 2 , Si and SiO x .(0 Show more

Cited by 3 publications

References 18 publications

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon

Blue Electroluminescence in SRO-HFCVD Films

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