2021
DOI: 10.2339/politeknik.682649
|View full text |Cite
|
Sign up to set email alerts
|

Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure

Abstract: ❖ Structural properties of AlN buffer layers are investigated by (HR-XRD) technique.❖ Interfacial roughness of AlN buffer layer was determined by XRR technique.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 22 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?