MoTe<sub>2</sub>van der Waals homojunction p–n diode with low resistance metal contacts

Aftab, Sikandar; Khan, Muhammad Farooq; Gautam, Praveen; Noh, Hwayong; Eom, Jonghwa

doi:10.1039/c8nr10526j

Cited by 56 publications

(65 citation statements)

References 60 publications

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“…Further, when (I ds -V ds ) characteristics were measured, it was found that Al/Au metal contacts showed Ohmic contribution in Figure 2c, while the Pt/Au metal contacts showed non-Ohmic contribution (Figure 2d). The reason is that Al/Au metal contacts for n-type MoTe 2 have a lower value of the work function (φ = 4.1 eV) [29,31] than the conduction band. Also, using the transfer length measuring technique ( Figure 2b), we calculated the contact resistances for n-type MoSe 2 by employing different metal contacts, as shown in Figure 2b.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, for evaluating the p-MoTe 2 /BN/n-MoSe 2 PIN diode, the ideality factor can be determined in the forward-biased regime by using the interpretation form of the diode equation [16,30] ( )…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…The barrier height (ϕ B ) can be determined in the reverse bias saturation region of I ds -V ds characteristics of the diode at fixed reverse bias voltage (V ds = −2V). By considering the equation based on the thermionic emission theory [31,38]…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…[14] MoTe 2 in the monolayer has a value of 1.10 eV with a direct bandgap, and its bulk form showed an indirect optical bandgap of 0.88 eV. [15][16][17][18] MoSe 2 in its monolayer or…”

Section: Introductionmentioning

confidence: 99%

“…[ 14 ] MoTe 2 in the monolayer has a value of 1.10 eV with a direct bandgap, and its bulk form showed an indirect optical bandgap of 0.88 eV. [ 15–18 ] MoSe 2 in its monolayer or bilayer form showed a direct bandgap of 1.15 eV, while the bulk form exhibited an indirect bandgap of 1.1 eV. [ 19 ] FETs based on multilayered MoTe 2 have exhibited hole conduction with field‐effect mobility from 0.2 to 40 cm 2 V −1 s −1 depending on device structure, [ 7,20 ] while MoSe 2 exhibits electron conduction, with field‐effect mobility about ≈50 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

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Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Aftab

Samiya

Haq

et al. 2020

Adv Materials Inter

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Here, van der Waals multi‐heterojunctions (PN, NP, PIN, and NPN) are fabricated by stacking of MoTe2, hexagonal boron nitride (h‐BN), and MoSe2 nanoflakes using a mechanical‐exfoliation technique where the dynamic rectification is examined. Low‐resistance metal contacts Al/Au and Pt/Au are applied to MoSe2 and MoTe2, respectively, and gate‐dependent rectifying behavior is achieved, with a rectification ratio of up to 105 in PN devices. It is found that the performance of the device is enhanced by placing an interfacial layer h‐BN between two opposite layers of 2D materials where the rectification ratio is found to be >106 with the ideality factor ≈1.3 in the PIN devices. Also, using the conventional Richardson's plot, the barrier heights of PN and PIN diodes are calculated to be 260 and 490 meV at zero gate bias, respectively. As well, the devices exhibit good performance with a built‐in electric field observed in both PN and PIN diodes, which gives rise to an open‐circuit voltage (Voc) and short‐circuit current (Isc) under zero external bias. Remarkably, it is found that the performance of the devices also gets better by forming double heterojunction (NPN) layer than PN or NP layers. The device is also tested for a rectification application, and it successfully rectifies an input alternating‐current signal. These findings are important for the development of nano‐ and optoelectronics devices.

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Section: Resultsmentioning

confidence: 99%

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…[14] MoTe 2 in the monolayer has a value of 1.10 eV with a direct bandgap, and its bulk form showed an indirect optical bandgap of 0.88 eV. [15][16][17][18] MoSe 2 in its monolayer or…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Aftab

Samiya

Haq

et al. 2020

Adv Materials Inter

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Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein

Dastgeer

Shahzad

Chae

et al. 2022

Adv Funct Materials

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Bipolar junction transistors (BJTs), the basic building blocks of integrated circuits, are deployed to control switching applications and logic operations. However, as the thickness of a conventional BJT device approaches a few atoms, its performance decreases substantially. The stacking of atomically thin 2D semiconductor materials is advantageous for manufacturing atomically thin BJT devices owing to the high carrier density of electrons and holes. Here, an atomically thin n-p-n BJT device composed of heavily doped molybdenum ditelluride (n-MoTe 2 ) and germanium selenide (p-GeSe) sheets stacked over each other by van der Waals interactions is reported. In a common-emitter configuration, MoTe 2 /GeSe/MoTe 2 BJT devices exhibit a considerably high current gain (β = I c /I b = 29.3) at V be = 2.5 V. The MoTe 2 / GeSe/MoTe 2 BJT device is employed to detect streptavidin biomolecules as analytes within <10 s. The real-time response of the functionalized BJT device is examined at various concentrations of streptavidin biomolecules ranging from 250 to 5 pm. Such vdW BJT devices can trigger the development of state-of-the-art electronic devices that can be used as biosensors to detect the various kinds of target DNA and proteins like spike protein of Covid-19.

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Highly Flexible Tribovoltaic Nanogenerator Based‐on P‐N Junction Interface: Comparative Study on Output Dependency Dominated by Photovoltaic Effect in Freestanding‐Mode

Sriphan,

Worathat,

Pharino

et al. 2023

Adv Funct Materials

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The emergence of tribovoltaic nanogenerators (TVNGs) paves the way for developing a new kind of semiconductor‐based energy harvester that overcomes the restriction of low output current in a conventional approach. The traditional TVNG generally depends on the frictional pair between two rigid semiconductors (or metal‐semiconductor), limiting the practicability of flexible and portable electronics. Recent developments require the fundamental understanding of charge generation in diverse operating modes and structures. Here, a flexible TVNG based on the p‐Cu2O/n‐g‐C3N4 interface is presented. Operating in a freestanding mode, the proposed TVNG can generate a stable signal in any optical conditions including UV illumination, dark, and ambient. Under UV illumination, the electrical outputs of the TVNG reach 0.43 V and 2.1 µA cm−2, which are significantly larger than those obtained from dark and ambient conditions. The results demonstrate the coupling effect of three phenomena: tribovoltaic, photovoltaic, and triboelectric effects, and the unique mechanism to the observed signal is proposed. Additionally, the TVNG shows the practical feasibility of energy harvesting with capacitor charging and charge‐boosting circuits. This study showcases the unique concept with potential for developing a novel flexible nanogenerator in many aspects, including material, structure, and fundamental mechanism.

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MoTe₂van der Waals homojunction p–n diode with low resistance metal contacts

Abstract: We present a van der Waals p-MoTe2/n-MoTe2 homojunction p–n diode with low resistance metal contacts.

Cited by 56 publications

References 60 publications

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein

Highly Flexible Tribovoltaic Nanogenerator Based‐on P‐N Junction Interface: Comparative Study on Output Dependency Dominated by Photovoltaic Effect in Freestanding‐Mode

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MoTe2van der Waals homojunction p–n diode with low resistance metal contacts

Abstract: We present a van der Waals p-MoTe2/n-MoTe2 homojunction p–n diode with low resistance metal contacts.

Cited by 56 publications

References 60 publications

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein

Highly Flexible Tribovoltaic Nanogenerator Based‐on P‐N Junction Interface: Comparative Study on Output Dependency Dominated by Photovoltaic Effect in Freestanding‐Mode

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MoTe₂van der Waals homojunction p–n diode with low resistance metal contacts