MPCVD diamond-SiC composite stacks for enhanced thermal performance: a concise review

Abstract

Diamond-silicon carbide (SiC) composite stacks is composed of two kinds of wide bandgap materials, each of which has excellent thermal, electronic, optical and mechanical properties, and is considered as an ideal material for heat dissipation. For optimal application, the interface between the two materials needs to be almost void free and of high-quality growth. Traditional methods such as sintering and liquid/vapor phase infiltration have many defects, but the preparation of diamond-SiC composites by microwave plasma chemical vapor deposition (MPCVD) method can effectively solve these problems, overcome the interface defects, and break through the size limitation. In this review, various techniques for preparing diamond-SiC composites by MPCVD will be discussed. It mainly includes co-deposition of diamond and cubic polytype β-SiC, deposition of diamond films on β-SiC/Si substrates and deposition of diamond films on 4H-SiC and 6H-SiC substrate. The implementation methods, research progress and application trend of each technique are reviewed in detail.