2017
DOI: 10.3390/app7111116
|View full text |Cite
|
Sign up to set email alerts
|

Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

Abstract: Abstract:Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devices. Particularly, to realize highly efficient intermediate-temperature (600~1000 K) thermoelectric modules with this promising thermoelectric material, a more thermally and electrically reliable interface b… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0

Year Published

2018
2018
2021
2021

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 9 publications
(7 citation statements)
references
References 15 publications
0
7
0
Order By: Relevance
“…This study resolves the thermal conductivity discrepancy between single and poly-crystalline SnSe, and attains a ZT approximately 2.5 for polycrystalline SnSe which nearly matches the recordhigh value of the single crystals. We believe SnSe might revolutionize thermoelectric power generation technology if its device can be demonstrated, but to date such reports are few and will be discussed later [93,94].…”
Section: Thermoelectric Materialsmentioning
confidence: 99%
“…This study resolves the thermal conductivity discrepancy between single and poly-crystalline SnSe, and attains a ZT approximately 2.5 for polycrystalline SnSe which nearly matches the recordhigh value of the single crystals. We believe SnSe might revolutionize thermoelectric power generation technology if its device can be demonstrated, but to date such reports are few and will be discussed later [93,94].…”
Section: Thermoelectric Materialsmentioning
confidence: 99%
“…To avoid having a mismatch at the interface during expansion, the thermal coefficient of the diffusion layer should be similar to that of the TE material and the electrode. Bilayer metallization [54] and multilayer metallization [55] prove effective in lowering electrical contact resistance, providing thermal coefficient matching, and serve as a good diffusion barrier.…”
Section: Diffusion Barriermentioning
confidence: 99%
“…Their election is guided by the need to use inert chemical materials at high temperature against typical compounds in many thermoelectric materials, such as Sn, Pb, Te, and Se. This is the reason we chose thermocouples made of a niobium and chromel combination, ensuring that the Nb wires are in contact with the sample [27,33], which allows us to reach temperatures near up to 950 K without reactions between samples and thermocouples.…”
Section: Seebeck Measurements In Home-made Apparatusmentioning
confidence: 99%
“…Numerous different explanations have been proposed for such values, as surface oxidation, exact stoichiometry, porosity, morphology, and crystal defects of the samples. Thermoelectric devices made of this material have not been described yet despite the fact that SnSe presents one of the highest figures of merit, and only a few attempts proving the interface bonding properties for high-temperature modules have been reported [32,33].…”
Section: Introductionmentioning
confidence: 99%