Multi-Parameter Optimization of an InP Electro-Optic Modulator

Abstract

In this article, a method for indium phosphide (InP) electro-optic modulator (EOM) optimization is introduced. The method can be used for the design and analysis of an EOM based on the Mach-Zehnder interferometer (MZI) design. This design is based on the division of the input optical signal into two optical paths and then, after processing, it combines the light into a single waveguide. The symmetry of the structure can provide state-of-the-art EOM characteristics with a push-pull control signal. Using a traveling wave electrode (TWE) design as a starting point, the authors varied the heterostructure design and optical waveguide parameters to obtain the optimal values of initial optical loss, evenness of the initial optical loss in the operating wavelength range, and the extinction ratio and length of the modulator arm. The key features of the proposed optimization method include the following: all independent input parameters are linked into a single system, where the relationship between the electrical and optical parameters of the modulator is realized; all physically realizable combinations of the input parameters are available for analysis; and EOM optimization is possible for one target parameter or for a group of target parameters. The results of the EOM optimization using the described method are presented.

Technological Development of an InP-Based Mach–Zehnder Modulator

“…At the next stage of this work, the authors will optimize both the heterostructure and the design of the topology of the MZM to achieve parameter values comparable to existing analogs. For this, in parallel with the development of the technology, a method was developed to optimize an InP-based electro-optical modulator [25]. Thus, the results obtained confirm the possibility of manufacturing InP-based MZMs using the developed technology.…”

Structure simulation and design optimization of high-performance lithium niobate thin film electro-optic modulator

“…In the past few decades, photonic integrated circuits have rapidly emerged in the field of optics, and optoelectronic devices are developing toward high performance, low power consumption, high bandwidth, and single-chip integration 1 – 3 Significant efforts have been made on platforms, such as silicon on insulator, 4 , 5 silicon nitride, 6 indium phosphide, 7 , 8 polymers, 9 and lithium niobate thin film (TFLN) 10 , 11 . Among them, due to its remarkable photoelectric characteristics, lithium niobate film (LN) has garnered considerable attention from numerous researchers.…”

Проектирование Дизайна Туннельно-Связанных Квантовых Ям Для Создания Модулятора По Схеме Маха--Цендера

“…В настоящее время рядом исследовательских групп ведутся работы, направленные на оптимизацию дизайна ТСКЯ, с целью улучшения характеристик полупроводниковых модуляторов по схеме планарного интерферометра Маха-Цендера [2,12,13].…”