Multi-step pulling of GaInSb bulk crystal from ternary solution

Shintani, Jun; Kimura, Masakazu; Sukegawa, Tokuzo

doi:10.1016/s0022-0248(99)00753-8

Cited by 17 publications

(9 citation statements)

References 6 publications

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“…The In axial segregation decreased from 0.659 mol% mm −1 to 0.374 mol% mm −1 . Tanaka et al [13] prepared GaInSb crystal with Czochralski method, where InSb single crystal was taken as seed crystal, the In radial segregation decreased to 0.526 mol% mm −1 and the dislocation density to 5.6 × 10 4 cm −2 . Gadkari et al [14][15][16] prepared GaInSb single crystal with vertical directional solidification method, in which the solid-liquid interface shape of and the crystal quality was improved by adjusting the angle of seed crystal placement, and the In concentration changed less than 10% in axial and radial directions.…”

Section: Introductionmentioning

confidence: 99%

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Wang¹,

Wang²,

He³

et al. 2023

Semicond. Sci. Technol.

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Ga1-xInxSb(0<x<1) crystal is a very promising substrate material, which can be used to fabricate a variety of high-performance infrared detectors and lasers by epitaxial growth. Herein, we prepared high quality Ga0.86In0.14Sb crystal (25 mm diameter, 100 mm length) with travelling heater method (THM) applied rotating magnetic field (RMF), and revealed the effects of RMF intensity on structure and electrical and optical properties of the crystal. As the RMF intensity increased the crystal quality significantly improved, and the radial segregation of indium decreased from 0.258 to 0.031 mol%/mm, in the center of the crystal. Similarly, the segregation of indium along the ingot between 20 to 80 mm, towards the traveling zone, decreased from 0.114 to 0.038 mol%/mm. The dislocation density of GaInSb crystal ingot also decreased from 5.361×105 cm-2 to 5.295×103 cm-2. The electric properties of the crystal also improved, the carrier mobility increased to 1.902×103 from 1.358×103 cm2/(V•s), the resistivity decreased to 1.047×10-3 from 1.822×10-3 Ω•cm. Moreover, the infrared transmittance increased from 36 to 39%.

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Section: Introductionmentioning

confidence: 99%

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Wang¹,

Wang²,

He³

et al. 2023

Semicond. Sci. Technol.

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“…In this case the lattice parameter can be tuned between 6.095 Å (GaSb) and 6.479 Å (InSb). Several research groups have succeeded in growing GaInSb single crystals [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Performance limits of room-temperature InAsSb photodiodes

2010

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The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R 0 A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature.

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“…For example, in the Czochralski experiments of Tanaka et al [9,10] the growth rate was sufficiently slow (0.2-0.3 mm/h) to allow the solute to diffuse to the growth front. Unfortunately, the axial composition was still not consistently controlled.…”

Section: Introductionmentioning

confidence: 99%