Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb_1-XSn_XTe

Abstract

A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb1-XSnXTe as a saturated absorber (SA). Compared with other SA materials, Pb1-XSnXTe have advantages of narrow bandgap and high optical absorption in the near-infrared region. The laser produced a stable fourwavelength lasing configuration characterized by a wavelength spacing of approximately 2 nm, with pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 0.899 to 0.854 µs, 1.08 to 1.15 MHz, and 31.5 dB, respectively. The results indicate that the Pb1-XSnXTe-SA is suitable for pulsed generation in the nearinfrared region and its potential in various fields, including super-resolution imaging, high-density optical storage, and threedimensional laser lithography.