Multiphase Active Energy Recycling Technique for Overshoot Voltage Reduction in Internet-of-Things Applications

Lee, Jia-Jyun; Yang, Shang-Hsien; Muniandi, Balakumar; Chien, Meng-Wei; Chen, Ke-Horng; Lin, Ying-Hsi; Lin, Shian-Ru; Tsai, Tsung-Yen

doi:10.1109/jestpe.2019.2949840

Cited by 2 publications

(1 citation statement)

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“…The essential parameter of a bond wire is its parasitic inductance that elevates more significantly with frequency and should be considered during the circuit-level simulations [54], [55]. On the other hand, the inductance of bond wires can be useful for manufacturing of integrated inductors [56], [57].…”

Section: Bond Wire Inductormentioning

confidence: 99%

Fully Integrated On-Chip Inductors: An Overview

Robert

Kovac

Richard

et al. 2022

2022 20th International Conference on Emerging eLearning Technologies and Applications (ICETA)

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This paper presents an overview and State-of-the-Art of fully integrated inductors with common fabrication processes used for implementation of these structures into a chip. The first step is an overview of fabrication technologies that starts with standard CMOS general purpose processes expanded by Far-BEOL and substrate alteration process (SOI, Silicon Embedded, TSV, TGV, PTH, Core Insertion); and continues to advanced process nodes like SMMT and Bond Wire utilization. Then, an overview of fully integrated inductor structures consists of selected topologies with notable parameters achieved in last few years. Critical parameters of integrated inductors include: inductance L DC , inductance density L A , quality factor Q, selfresonant frequency FSR and series resistance R DC . These parameters are as important as the purpose and fabrication process.

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