Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

Seo, S. S. A.; Marton, Zsolt; Choi, Woo Seok; Hassink, G.W.J.; Blank, Dave H.A.; Hwang, Harold Y.; Noh, T. W.; Egami, T.; Lee, Ho Nyung

doi:10.1063/1.3213390

Cited by 110 publications

(84 citation statements)

References 14 publications

(17 reference statements)

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“…A growing body of theoretical works [13][14][15][16][17] predict that at the interface there would be a large number of electronic sub-bands, suggesting that the above transport characteristics might be rather sensitive to the details of the disorder and of the confining potential at the interface. This complexity is further supported by transport 11,[18][19][20] , optical 21 and heat conductivity 22 measurements that proposed that at highcarrier densities this system has multiple types of carriers existing at different distances from the interface, possibly on different TiO 2 planes 11,13,14,17,21,23 . Thus, to date, a simple relation between specific energy bands and the fundamental transport phenomena observed in this system is still missing.…”

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confidence: 86%

A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface

et al. 2012

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The two-dimensional electron system at the interface between the insulating oxides LaAlo 3 and srTio 3 exhibits ferromagnetism, superconductivity and a range of unique magnetotransportproperties. An open experimental challenge is to identify, out of the multitudinous energy bands predicted to exist at the interface, the key ingredients underlying its emergent transport phenomena. Here we show, using magnetotransport measurements, that a universal Lifshitz transition between d orbitals of different symmetries lies at the core of the observed phenomena. We find that LaAlo 3 /srTio 3 systems generically switch from one-to two-carrier transport at a universal carrier density, which is independent of the LaAlo 3 thickness and electron mobility. Interestingly, the maximum superconducting critical temperature occurs also at the Lifshitz density, indicating a possible connection between the two phenomena. A simple band model, allowing for spin-orbit coupling at the atomic level, connects the observed transition to a variety of previously reported properties. our results demonstrate that the fascinating behaviour observed so far in these oxides follows from a small but fundamental set of bands.

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confidence: 86%

A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface

et al. 2012

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“…While BiT is transparent, 1B2L shows a darker colour due to the enhanced absorption of light in the visible wavelength range. The dark colour is not related to unwanted oxygen vacancies typically found in reduced perovskite oxides 25 . In fact, all samples were highly insulating.…”

Section: Persistent Ferroelectricitymentioning

confidence: 99%

Wide bandgap tunability in complex transition metal oxides by site-specific substitution

et al. 2012

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Fabricating complex transition metal oxides with a tunable bandgap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the mott insulator lanthanum cobaltite, its bandgap can be narrowed by as much as 1 eV, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the bandgap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the bandgap in complex oxides for use in emerging oxide optoelectronic and energy applications.

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“…Moreover, Dikin et al take the viewpoint that two distinct electronic systems are associated with the antagonistic superconducting and ferromagnetic properties: the electrons that are generated by the polar catastrophe mechanism are suggested to be related with magnetism while superconductivity is associated with the charge carriers induced by the presence of oxygen vacancies. The concept of two different types of charge carriers which could contribute to the interface electrical transport has been discussed also in [8][9][10][11] .…”

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confidence: 99%

Magnetic and superconducting phases at the LaAlO3/SrTiO3interface: The role of interfacial Ti 3delectrons

et al. 2012

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Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

Cited by 110 publications

References 14 publications

A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface

A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface

Wide bandgap tunability in complex transition metal oxides by site-specific substitution

Magnetic and superconducting phases at the LaAlO3/SrTiO3interface: The role of interfacial Ti 3delectrons

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