Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Kriegner, Dominik; Výborný, Karel; Olejník, K.; Reichlová, Helena; Novák, V.; Martí, X.; Gàzquez, Jaume; Saidl, V.; Němec, Petr; Volobuev, Valentine V.; Springholz, G.; Holý, V.; Jungwirth, T.

doi:10.1038/ncomms11623

Cited by 211 publications

(200 citation statements)

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“…Hence, such an effect also exists in antiferromagnets. Such type of (noncrystalline) anisotropic magnetoresistance was therefore demonstrated in collinear antiferromagnets such as FeRh (Marti et al, 2014;, CuMnAs , MnTe (Kriegner et al, 2016), and Mn 2 Au (H.-C. . The effect was also detected isothermally in IrMn (Galceran et al, 2016).…”

Section: A Anisotropic Magnetoresistancementioning

confidence: 99%

“…For example, anisotropic magnetoresistance (see Sec. III.A) was detected in semiconducting Sr 2 IrO 4 (crystalline component) (Fina et al, 2014;, semimetallic CuMnAs (noncrystalline component) , and II-VI semiconducting MnTe (noncrystalline component) (Kriegner et al, 2016). Recently, the first "(ferro)magnet-free" memory prototype with electrical writing and readout was produced with CuMnAs, exploiting the inverse spin galvanic effect for writing and the planar Hall component of the anisotropic magnetoresistance effect for reading ) (see Sec.…”

Section: Semiconductors and Semimetalsmentioning

confidence: 99%

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Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Section: A Anisotropic Magnetoresistancementioning

confidence: 99%

Section: Semiconductors and Semimetalsmentioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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“…33 Recently, several experiments have demonstrated AMR read-out in ohmic antiferromagnetic devices. 10,12,18,[34][35][36] Fig . 3 shows an example of an FeRh antiferromagnetic memory resistor 10 in which one state has antiferromagnetic moments aligned parallel and the other state perpendicular to the probing current direction.…”

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confidence: 99%

Antiferromagnetic spintronics

et al. 2016

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Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.Interesting and useless -this was the common perception of antiferromagnets expressed quite explicitly, for example, in the 1970 Nobel lecture of Louis Néel.1 Connecting to this traditional notion we can define antiferromagnetic spintronics as a field that makes antiferromagnets useful and spintronics more interesting. Below we give an overview of this emerging field whose aim is to complement or replace ferromagnets in active components of spintronic devices.We recall some key physics roots of the field and first concepts of spintronic devices based on antiferromagnetic counterparts of the non-relativistic giantmagnetoresistance and spin-transfer-torque phenomena. 2We then focus on electrical reading and writing of information, combined with robust storage, that can be realized in antiferromagnetic memories via relativistic magnetoresistance and spin torque effects.3,4 Related to these topics is the research of spintronic devices in which antiferromagnets act as efficient generators, detectors, and transmitters of spin currents. This will lead us to studies exploring fast dynamics in antiferromagnets 5 and different types of antiferromagnetic materials. They range from insulators to superconductors. Here we comment also on the relation between crystal antiferromagents and synthetic antiferromagnets, with the latter ones playing an important role in spintronic sensor and memory devices.6 In concluding remarks we outline some of the envisaged future directions of research and potential applications of antiferromagnetic spintronics. Equilibrium properties and magnetic storage in antiferromagnetsThe understanding of equilibrium properties of ferromagnets has been guided by the notion of a global molecular field, introduced by Pierre Weiss.1 The theory starts from the Curie law for paramagnets with the inverse susceptibility proportional to temperature, χ −1 ∼ T . It further assumes that the externally ap...

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“…Utilizing (and also studying) AFMs is difficult, largely because the magnetic order in AFMs is hard to detect and to manipulate. Recently, electrical detection [19][20][21][22][23] and manipulation of the AFM order has been demonstrated [23,24], however, both detection and manipulation still remain challenging from a practical point of view. …”

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confidence: 99%

Spin-Polarized Current in Noncollinear Antiferromagnets

et al. 2017

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Noncollinear antiferromagnets, such as Mn3Sn and Mn3Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin-polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transversal spin current, which has a distinct symmetry and origin from the conventional spin Hall effect. We illustrate the existence of the spin-polarized current and the transversal spin current by performing ab initio microscopic calculations and by analyzing the symmetry. Based on the spinpolarized current we propose an antiferromagnetic tunneling junction, analogous in functionality to the magnetic tunneling junction.Introduction. Spintronics is a field that studies phenomena in which both spin and charge degree of electron play an important role. Many of the key spintronics effects are based upon the existence of spin currents. Two main types of spin currents are utilized: the spin-polarized currents in ferromagnets (FMs) and the spin currents due to the spin Hall effect (SHE) which are transveral to the charge current and appear even in non-magnetic materials. The most important effects that originate from the spin-polarized currents in FMs are the giant and the tunneling magnetoresistance effects (GMR and TMR) [1][2][3] and the spin-transfer torque (STT) [4,5]. These effects are utilized in magnetic tunneling junctions (MTJs), which form the basic building block of a new type of solid state memory, the magnetic random access memory (MRAM) [6]. This memory is non-volatite and has speed and density comparable to the widely used dynamic random access memory. The SHE on the other hand is responsible (though other effects can contribute) for the spin-orbit torque (SOT) [7,8] in multilayer heterostructures, which can be used for efficient and fast switching of FM layers. The SOT is now also being explored for use in MRAMs [9,10].While spintronics has traditionally focused on FM and non-magnetic materials, in the past few years also antiferromagnetic (AFM) materials have attracted a considerable interest. AFMs offer some unique advantages compared to FMs, but are much less explored (see reviews [11][12][13]). AFMs have a very fast dynamics, which allows for switching on ps timescale [14][15][16]. Furthermore, there exists a wide range of AFM materials, including many insulators and semiconductors, multiferroics [17] and superconductors [18]. Utilizing (and also studying) AFMs is difficult, largely because the magnetic order in AFMs is hard to detect and to manipulate. Recently, electrical detection [19][20][21][22][23] and manipulation of the AFM order has been demonstrated [23,24], however, both detection and manipulation still remain challenging from a practical point of view.

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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Cited by 211 publications

References 33 publications

Antiferromagnetic spintronics

Antiferromagnetic spintronics

Antiferromagnetic spintronics

Spin-Polarized Current in Noncollinear Antiferromagnets

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