Muonium states in Cu<sub>2</sub>ZnSnS<sub>4</sub>solar cell material

Alberto, H. V.; Vilão, R. C.; Gil, J. M.; Duarte, J. Piroto; Vieira, R. B. L.; Weidinger, A.; Leitão, J. P.; Cunha, A. F. da; Sousa, M. G.; Teixeira, Jennifer P.; Fernandes, Paulo A.; Salomé, Pedro M. P.; Timmo, K.; Loorits, Mihkel; Amato, A.; Luetkens, H.; Prokscha, T.; Suter, A.; Salman, Z.

doi:10.1088/1742-6596/551/1/012045

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…Fast relaxing diamagnetic-like signals were observed also in various other systems: e.g., I. Fan et al in photoexcited Ge [11], H. V. Alberto et al in solar cell materials [12], R. B. L. Vieira et al in HfO 2 [13], R. C. Vilão in TeO 2 [14].…”

Section: Introductionmentioning

confidence: 83%

Role of the transition state in muon implantation

et al. 2017

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In muon-spin-rotation experiments, positive muons are implanted in the material and come to rest in the unrelaxed host lattice. The formation of the final configuration requires a lattice relaxation which does not occur instantly. The present paper is concerned with the transition from the initial stopping state to the final muon configuration. We identify the often observed fast relaxing signal in muon experiments (e.g., in several oxides studied recently) with the transition state in this conversion process. This state is paramagnetic with a small hyperfine interaction (in the order of MHz) which fluctuates and averages to almost zero. Because of its apparent diamagnetic frequency behavior, the fast signal was in the past assigned to Mu + or Mu − . We present evidence that this state is actually paramagnetic. The model presented in this paper is of importance for the interpretation of past and future μSR measurements.

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Section: Introductionmentioning

confidence: 83%

Role of the transition state in muon implantation

et al. 2017

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“…where A dia is the diamagnetic signal amplitude, λ is the exponential depolarization rate, ω is the angular frequency and φ is the phase. It should be noted that the CIGS data is usually fitted using a gaussian damping 9,[12][13][14][15] , whereas the adequate relaxation function for Al 2 O 3 is the exponential 16 . Our slow-muons data do not allow a precise determination of the shape of the relaxation and an exponential relaxation function was chosen for the complete set of implantation energies.…”

Section: Please Cite This Article As Doi:101063/15126529mentioning

confidence: 99%

Muon implantation experiments in films: Obtaining depth-resolved information

Simões

Alberto

Vilão

et al. 2020

Review of Scientific Instruments

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Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, also in the order of tens of nanometers. Therefore, an adequate simulation procedure is required in order to extract the depth-dependence of the experimental parameters. Here we present a method to extract depth-resolved information from the implantation energy dependence of the experimental parameters in a low-energy muon spin spectroscopy experiment. The method and corresponding results are exemplified for a semiconductor film, Cu(In,Ga)Se 2 , covered with a thin layer of Al 2 O 3 , but can be applied to any heterostructure studied with low energy muons. It is shown that if an effect is present in the experimental data, the method is an important tool to identify its location and depth extent.

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“…The diamagnetic fraction was found to be smaller than unity for most of the measurements. This indicates that the muons experience a strong interaction during their implantation stage, reducing the formation probability of the final bound configuration [4,[8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

et al. 2020

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The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.

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Muonium states in Cu₂ZnSnS₄solar cell material

Cited by 10 publications

References 20 publications

Role of the transition state in muon implantation

Role of the transition state in muon implantation

Muon implantation experiments in films: Obtaining depth-resolved information

CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

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Muonium states in Cu2ZnSnS4solar cell material

Cited by 10 publications

References 20 publications

Role of the transition state in muon implantation

Role of the transition state in muon implantation

Muon implantation experiments in films: Obtaining depth-resolved information

CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

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Muonium states in Cu₂ZnSnS₄solar cell material