2021
DOI: 10.1039/d0tc05861k
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N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Abstract: Doping improves critical performances metrics in electronic devices. Research into n-doped organic small molecules is comparatively limited, because of a historical combined lack of available n-dopants and unfavourable microstructural effects....

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Cited by 24 publications
(22 citation statements)
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References 60 publications
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“…Furthemore, electron affinities lower than −3 eV ensure trap-free electron transport. [63] In fact, NFAs often exhibit ambipolar transport [63,64] as their ionization energies are normally above 6 eV. Rigid planar cores and large electronic couplings result in superior exciton diffusion lengths, up to 50 nm.…”
Section: Discussionmentioning
confidence: 99%
“…Furthemore, electron affinities lower than −3 eV ensure trap-free electron transport. [63] In fact, NFAs often exhibit ambipolar transport [63,64] as their ionization energies are normally above 6 eV. Rigid planar cores and large electronic couplings result in superior exciton diffusion lengths, up to 50 nm.…”
Section: Discussionmentioning
confidence: 99%
“…O-IDTBR devices exhibit the highest µ e of 0.35 cm 2 V -1 s -1 in agreement with previous reports. [51] Next, DQ was introduced by mixing it directly with the NFA in the same solution. The DQ concentration varied from 0 to 1 wt.% of the total solid mass of the NFA and the impact on the device operation was studied.…”
Section: Resultsmentioning
confidence: 99%
“…Furthemore, electron affinities lower than -3 eV ensure trap-free electron transport [63]. In fact, NFAs often exhibit ambipolar transport [63,64] as their ionization energies are normally above 6 eV. Rigid planar cores and large electronic couplings result in superior exciton diffusion lengths, up to 50 nm [65].…”
Section: Discussionmentioning
confidence: 99%