N<sup>+</sup>-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond

Das, Dhruba; Rao, M. S. Ramachandra

doi:10.1039/d1ra03846j

Cited by 5 publications

(5 citation statements)

References 73 publications

(104 reference statements)

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“…These systems are also called 'Metallic glass systems'. Exactly similar trend was noticed in UNCD films with varying fluences of N ion implantation [143]. Therefore, the temperature dependence of conductivity is mostly a combination of activated band and hopping conduction over a wide temperature region.…”

Section: Nitrogen Doping Via Ion Implantationsupporting

confidence: 74%

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Das¹,

Raj²,

Jana³

et al. 2022

J. Phys. D: Appl. Phys.

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Diamond due to its outstanding optical, electrical, mechanical and thermal properties finds an important place in electronic, opto-electronic and quantum technologies. Recent progresses showing superconductivity in diamond by boron doping has opened up many avenues including its applications in SQUID devices especially with polycrystalline diamond films. Granular boron doped diamond films find applications in quantum inductance devices where high surface inductance is required. Particularly important are the defect centers in diamond like nitrogen-vacancy (N-V), silicon vacancy (SiV) and other color centres which are ideal candidates for next generation quantum hardware systems. For efficient device applications, an indispensable need remains for a substitutional donor in diamond lattice that yields a lower thermal activation energy at room temperature. In this review, a comprehensive summary of research and the technological challenges has been reported including some of our latest results on nitrogen doping in polycrystalline diamond to understand the transport phenomenon emphasizing on its possible future applications.

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Section: Nitrogen Doping Via Ion Implantationsupporting

confidence: 74%

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Das¹,

Raj²,

Jana³

et al. 2022

J. Phys. D: Appl. Phys.

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“…The extent of damage was dependent on the type of particle and plant. Studies in the condensed matter physics have shown the that irradiation can cause holes in materials (Miyoshi, 1996;Das and Rao, 2021). Wang and Wang (2013) investigated the effects of N + irradiation on the wheat seeds and found that higher doses of irradiation caused etching and holes in the seed coat.…”

Section: Morphology Observation Of Seeds After Ion Beam Irradiationmentioning

confidence: 99%

Reactive oxygen species may be involved in the distinctive biological effects of different doses of 12C6+ ion beams on Arabidopsis

Yin,

Cui,

Chi

et al. 2024

Front. Plant Sci.

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IntroductionHeavy ion beam is a novel approach for crop mutagenesis with the advantage of high energy transfer line density and low repair effect after injury, however, little investigation on the biological effect on plant was performed. 50 Gy irradiation significantly stimulated the growth of Arabidopsis seedlings, as indicated by an increase in root and biomass, while 200 Gy irradiation significantly inhibited the growth of seedlings, causing a visible decrease in plant growth.MethodsThe Arabidopsis seeds were irradiated by 12C6+. Monte Carlo simulations were used to calculate the damage to seeds and particle trajectories by ion implantation. The seed epidermis received SEM detection and changes in its organic composition were detected using FTIR. Evidence of ROS and antioxidant systems were analyzed. RNA-seq and qPCR were used to detect changes in seedling transcript levels.Results and discussionMonte Carlo simulations revealed that high-dose irradiation causes various damage. Evidence of ROS and antioxidant systems implies that the emergence of phenotypes in plant cells may be associated with oxidative stress. Transcriptomic analysis of the seedlings demonstrated that 170 DEGs were present in the 50 Gy and 200 Gy groups and GO enrichment indicated that they were mainly associated with stress resistance and cell wall homeostasis. Further GO enrichment of DEGs unique to 50 Gy and 200 Gy revealed 58 50Gy-exclusive DEGs were enriched in response to oxidative stress and jasmonic acid entries, while 435 200 Gy-exclusive DEGs were enriched in relation to oxidative stress, organic cyclic compounds, and salicylic acid. This investigation advances our insight into the biological effects of heavy ion irradiation and the underlying mechanisms.

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“…The mechanical, thermal, electrical and optical properties of synthetic single crystal diamonds (SCDs) are very close to these of natural diamonds [1][2][3]. The SCD has been already applied as an important and practical material in the fields of optics, electronics and optoelectronics [2].…”

Section: Introductionmentioning

confidence: 99%

Terahertz optoelectronic properties of synthetic single crystal diamond

Xiao

Zhang

et al. 2023

Diamond and Related Materials

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N⁺-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond

Abstract: The paper highlights the effect of nitrogen ion implantation on polycrystalline and single crystal diamond where we try to explain its structural and electrical transport behaviour in three different ion dose regimes: low, medium and high fluence respectively.

Cited by 5 publications

References 73 publications

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Reactive oxygen species may be involved in the distinctive biological effects of different doses of 12C6+ ion beams on Arabidopsis

Terahertz optoelectronic properties of synthetic single crystal diamond

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N+-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond

Abstract: The paper highlights the effect of nitrogen ion implantation on polycrystalline and single crystal diamond where we try to explain its structural and electrical transport behaviour in three different ion dose regimes: low, medium and high fluence respectively.

Cited by 5 publications

References 73 publications

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

Reactive oxygen species may be involved in the distinctive biological effects of different doses of 12C6+ ion beams on Arabidopsis

Terahertz optoelectronic properties of synthetic single crystal diamond

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Product

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N⁺-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond