Nano-Structural Characteristics and Optical and Electrical Properties of Obliquely Deposited Manganese Oxide Thin Films

Abstract

In this work, manganese oxide thin films as a graded helical square tower-like (terraced) sculptured thin films with 8, 9, and 10 arms were deposited on a glass substrate by oblique angle deposition (OAD) method. Structural and morphological characteristics of the produced samples were obtained through xray diffraction (XRD), atomic force microscopy (AFM), and field emission electron microscopy (FESEM) analyses. The optical and electrical properties of manganese oxide thin film were studied by Photoluminescence (PL), UV-visible (UV-VIS), and V-I measurement. The spectrophotometry analysis on both s-and p-polarized lights at 90° incident light angles carried out for obtaining the optical spectra of the samples. Then, it used to calculate refractive index, energy gaps, and absorption peaks. Photoluminescence spectra for MnO films showed a 2.31, 2.28, and 2.26 eV gap energy in 8, 9, and 10 arms. The electrical resistance measurements of these samples showed that the resistance has strongly dependent on the intensity and energy of the incident light. The electrical resistance of these samples was also investigated under green, blue, red, and light radiation with 100 watts/cm 2 power density.

Effect of Annealing Process on the Morphological, Optical and Electrical Properties of Cu:MnO Films Prepared by PLD Technique

“…The compound manganese oxide has garnered significant attention from researchers, leading to several research endeavours [9,10]. Manganese oxide and manganese oxide nanoparticles have been synthesized via a variety of techniques, including spray pyrolysis [11], sol-gel [12], atomic layer deposition [13], thermal evaporation [14][15][16], pulsed laser deposition [17][18][19], RF magnetron sputtering [20,21], metal-organic chemical vapor deposition [22], and electron beam technique followed by archiving post-treatment [23]. Nelson et al [24] studied the impact of deposition temperature and substrate on the formation of manganese oxide thin films using ALD (Atomic Layer Deposition).…”