Nanometer Structure of Gate Electrode/Gate Insulator Interface and Anomalous Voltage Deviation of Tunneling Current in Submicron MOS Devices

Ushiyama, M.; Ohji, Y.; Nishimoto, T.; Komori, Kazuhiro; Kume, Haruki; Nakagawa, Shungo; Tachi, S.

doi:10.7567/ssdm.1990.c-5-3

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Nanometer Structure of Gate Electrode/Gate Insulator Interface and Anomalous Voltage Deviation of Tunneling Current in Submicron MOS Devices

Cited by 4 publications

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