Nanometre-scale chemical modification using a scanning tunnelling microscope

Utsugi, Yasushi

doi:10.1038/347747a0

Cited by 72 publications

(12 citation statements)

References 11 publications

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“…Using SPM tips one can move, react, etch, and dissolve atoms of, or molecules on, surfaces, and even, in some cases, move atoms in the bulk. 3,4 The next step, namely to exploit these abilities to create a complete device structure using only SPM, was not achieved hitherto.…”

Section: Introductionmentioning

confidence: 99%

Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Richter

Manassen

1999

Phys. Rev. B

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Hemispherical p/n/p transistor structures ranging from 100 m down to 0.05 m in diameter are fabricated in CuInSe 2 , by application of a high electric field between a conducting diamond tip of an atomic force microscope and a CuInSe 2 crystal. This leads to electromigration of Cu ions in the bulk of the material. The results of this thermally assisted process are the transistor structures. These are characterized by scanning spreading resistance microscopy. For large devices these results are compared and found to agree with those of ''conventional'' electron-beam-induced current ones. Removing several tens of atomic layers from the top surface of a structure does not affect the spreading resistance image of the device. This indicates the threedimensional hemispherical nature of the structures.

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Section: Introductionmentioning

confidence: 99%

Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Richter

Manassen

1999

Phys. Rev. B

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“…14 -16 In addition, the continuous compositional modification can occur in quasi-equilibrium alloy systems such as the chalcogenide glass. [11][12][13] Actually, through electrochemical reactions induced by STMs, Utsugi has produced nanoscale grooves in Ag-Se films, 17 and Sugawara et al produced hills and grooves in Ge-Sb-Te films. 18 Therefore, further studies will be valuable.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale modifications of chalcogenide glasses using scanning tunneling microscopes

Ohto

Tanaka

2002

Journal of Applied Physics

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Articles you may be interested inDevelopment of an in situ ultra-high-vacuum scanning tunneling microscope in the beamline of the 15 MV tandem accelerator for studies of surface modification by a swift heavy ion beam Rev. Sci. Instrum. 72, 3884 (2001); Nanoscale modifications in Cu-As-Se glasses ͑р30 Cu at. %͒ produced by a scanning tunneling microscope have been studied comparatively with those in As 2 Te 3 and Ag 35 As 26 Se 39 glasses and in Ag and Cu 3 AsSe 4 crystals. When subjected to the tip voltages greater than Ϯ3 V, all the samples, except Cu-As-Se glasses, produce hillocks or holes. In the Cu-As-Se glasses, nanometer hills accompanying peripheral grooves appear upon applications of negative tip voltage of about Ϫ5 V for 1 s. The size increases if the voltage is applied with light illumination, but it does not depend upon temperature ͑20-100°C͒ at which the voltage is applied. The size also increases in the glasses with higher Cu contents. This deformation can be accounted for as a Taylor cone produced under electronically induced fluidity.

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“…[1][2][3][4][5][6][7][8][9][10] The modification technique is applicable to a data storage device. Using single atoms as the memory units in a data storage device is an ultimate goal of attempts to manipulate atoms.…”

Section: Introductionmentioning

confidence: 99%

Nanometer-scale recording, erasing, and reproducing using scanning tunneling microscopy

Sato¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We demonstrate using a scanning tunneling microscope reproducible and reversible recording and erasing of marks about 10 nm in size. Studies on both data storage devices and nanometer fabrication using a scanning tunneling microscope have been carried out, involving a variety of techniques and materials. However, most studies neglect erasing, despite the fact that erasing is a major requisite, as well as recording and reading. Using a thin layer of a vanadate glass deposited on vanadium bronze, ␤-Na x V 2 O 5 , has made it possible to record, erase, and read 10 nm level marks at ambient temperature and pressure. The main mechanism for reversible recording is sodium ion migration between the vanadium bronze crystal phase and the vanadate amorphous phase along the electric field. The organic medium of a hemiquinone molecule was proposed for higher recording speed.

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Nanometre-scale chemical modification using a scanning tunnelling microscope

Cited by 72 publications

References 11 publications

Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Nanoscale modifications of chalcogenide glasses using scanning tunneling microscopes

Nanometer-scale recording, erasing, and reproducing using scanning tunneling microscopy

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