Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

The learning and inference efficiencies of an artificial neural network represented by a cross‐point synaptic memristor array can be achieved using a selector, with high selectivity (Ion/Ioff) and sufficient death region, stacked vertically on a synaptic memristor. This can prevent a sneak current in the memristor array. A selector with multiple jar‐shaped conductive Cu filaments in the resistive switching layer is precisely fabricated by designing the Cu ion concentration depth profile of the CuGeSe layer as a filament source, TiN diffusion barrier layer, and Ge3Se7 switching layer. The selector performs super‐linear‐threshold‐switching with a selectivity of > 107, death region of −0.70–0.65 V, holding time of 300 ns, switching speed of 25 ns, and endurance cycle of > 106. In addition, the mechanism of switching is proven by the formation of conductive Cu filaments between the CuGeSe and Ge3Se7 layers under a positive bias on the top Pt electrode and an automatic rupture of the filaments after the holding time. Particularly, a spiking deep neural network using the designed one‐selector‐one‐memory cross‐point array improves the Modified National Institute of Standards and Technology classification accuracy by ≈3.8% by eliminating the sneak current in the cross‐point array during the inference process.

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Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge₃Se₇ Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Kim

Woo

Jin

et al. 2022

Advanced Materials

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Electrical Effect of High-Field Induced Diffusive Metal in the Ceramic Film Deposited by the Aerosol Deposition Method

Lee

Kim

Cho

et al. 2019

Electron. Mater. Lett.

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Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

Yadav,

Dwivedi,

Verma

et al. 2024

Journal of Science: Advanced Materials and Devices

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Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

Cited by 5 publications

References 18 publications

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge₃Se₇ Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge₃Se₇ Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Electrical Effect of High-Field Induced Diffusive Metal in the Ceramic Film Deposited by the Aerosol Deposition Method

Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

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Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

Cited by 5 publications

References 18 publications

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Electrical Effect of High-Field Induced Diffusive Metal in the Ceramic Film Deposited by the Aerosol Deposition Method

Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

Contact Info

Product

Resources

About

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge₃Se₇ Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge₃Se₇ Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array