Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo‐Ching; Cheng, Tz-Yen; Kowalski, Jeff M.; Lee, Yao-Jen; Chao, Tien−Sheng; Wu, Ching‐Yi

doi:10.1109/led.2010.2042924

Cited by 13 publications

(6 citation statements)

References 9 publications

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“…A 4.5 nm NiSi film with very few NiSi 2 nano-islands, sample C, could be achieved by using setup 1 chamber with lower microwave power, 540 W, for the first step MWA. The maximum temperature on the process wafer surface is 233 • C. Figures 2a ∼ 2e show the [1][2][3][4][5][6][7][8][9][10] Si substrate cross-sectional HRTEM images of thin silicide layers. Figure 2a shows a typical thin silicide layer with partial crystalline and unreacted Ni (on top) was formed by the first step MWA of sample B.…”

Section: Resultsmentioning

confidence: 99%

“…16 As the silicide thickness is pushed to below 10 nm after RTA or MWA process, in experience, it is easy to form nano structures with NiSi 2 phases in the silicide layer. [17][18][19] Figure 3 shows the [1][2][3][4][5][6][7][8][9][10] Si substrate high-resolution HAADF image of the 4.5 nm NiSi sample, with the brightest contrast signifying NiSi (green inset, Fig. 3) and the bright one in the right inset directing to NiSi 2 (red inset, Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Microwave annealing (MWA) 3 has been realized to activate implanted dopants through solid phase epitaxial regrowth at low temperature. 4 It is promising for achieving advanced Si or Ge CMOS because of its unique volumetric heating and low temperature due to apparent non-thermal energy transfer. 5 The advantages of replacing rapid thermal annealing (RTA) with MWA are ultra-thin NiSi formation, diffusion-less junction, improved capacity of gate oxide and lower gate leakage.…”

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confidence: 99%

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Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Lee

Hsueh

et al. 2014

ECS J. Solid State Sci. Technol.

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A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Lee

Hsueh

et al. 2014

ECS J. Solid State Sci. Technol.

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“…[6][7][8][9][10][11] Microwave annealing, MWA, has shown the ability to re-grow amorphized damage layers and achieve high dopant activation levels while suppressing dopant diffusion for implanted dopants. [12][13][14][15][16][17] The present work investigates the use of "cluster ion" C and (single ion) P implants and MWA to achieve high C sub,eff and strain levels while at the same time activating P and restraining dopant diffusion. The stability of C sub,eff and P activation during subsequent RTA anneals is also studied.…”

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confidence: 99%

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

Cho

Yao

et al. 2013

ECS J. Solid State Sci. Technol.

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Effects of low-temperature (≈500 • C) microwave annealing (MWA) of Cluster-Carbon (C 7 ) and Phosphorus implants are compared with rapid thermal annealing (RTA) at 900 and 1000 • C for (100) and (110)-Si substrates. MWA annealing resulted in high levels of substitutional Carbon, 1.57% for (100)Si and 0.99% for (110)Si for C 7 implants. Addition of high-dose Phosphorus implants resulted in lower but still useful substitutional Carbon levels, 1.44% for (100)Si and 0.68% for (110)Si after MWA. RTA annealing at higher temperatures resulted in greatly reduced substitutional Carbon levels and deeper Phosphorus junctions. The effects of subsequent anneals by MWA and RTA methods are reported. MWA is shown to be a promising method for high-channel tensile strain in nMOSFETs with a substantially lower thermal budget than RTA.

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“…9,10 Therefore, the devices with MWA can reduce the impacts of punch-through, DIBL to obtain nano-scaled transistors with good short channel control. 11 In addition, this technique appears to be a promising replacement for RTA for the semiconductor industry. In this study, TFTs on the amorphous-Si films were fabricated using MWA.…”

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confidence: 99%

Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors

Lee

Chao

2012

ECS Solid State Letters

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In this study, activation and crystallization in short channel amorphous Si TFTs were demonstrated using a novel microwave annealing (MWA) technique. Both low-temperature MWA and rapid thermal annealing (RTA) were compared to study the dopant activation level. We successfully activated the source/drain region, improved the electronic mobility and suppressed the short-channel effects using low temperature MWA. This can reduce the annealing temperature and processing time below that of solid phase crystallization (SPC). This technique is promising for realizing a high utility rate of AM-LCDs with low cost.The commercial success of active-matrix liquid-crystal displays (AM-LCDs) has attracted much research into the performance improvement of thin-film transistors (TFTs), which function as the pixel switches in AM-LCDs. Various materials have been investigated as candidates for high mobility channels, such as organic semiconductors, 1 amorphous silicon (α-Si), 2 and semi-conducing oxide. 3 Among these candidates, amorphous silicon has attracted much attention because of its wide range of applicability in large area electronics, lower cost and ease of fabrication. 4 Along with finding new materials, it is necessary to develop a low temperature fabrication process capable of producing high performance TFTs (e.g., high carrier mobility and low resistances at source and drain) using glass as a substrate. SPC of α-Si is a method for manufacturing poly-Si films with low cost and excellent uniformity. 5 Although some heatproof glass could accept annealing temperature over 600 • C, 6 it is generally considered to be harsh condition to use glass as the substrate material. In addition, laser annealing, rapid thermal annealing (RTA), and metal-induced crystallization have been also used as annealing techniques for recrystallization and dopant activation in the amorphous or implanted Si layer. While RTA achieves the best results for short durations of processing, the lamp photons are not only heating the Si layer but also stimulate unintended defect formations which cause dopant diffusion. 7 Metal-induced crystallization in the short channels leads to unwanted contaminations of the active regions. 8 Furthermore, MWA were demonstrated to process annealing with lower crystallization temperatures and short dwell times than the SPC process. 9,10 Therefore, the devices with MWA can reduce the impacts of punch-through, DIBL to obtain nano-scaled transistors with good short channel control. 11 In addition, this technique appears to be a promising replacement for RTA for the semiconductor industry. In this study, TFTs on the amorphous-Si films were fabricated using MWA. The MWA process can reduce the crystallization temperature of amorphous Si, lowering the thermal budget of the entire process while enhancing substrate applications. In addition, the shrinkage of the device size may enhance the aperture rate. ExperimentalA 6-in. (100) bulk silicon wafer was used as the starting material. After a 500 nm-thick silicon dioxide (SiO 2 ) laye...

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Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

Cited by 13 publications

References 9 publications

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors

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