NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

Huang, Chien-Kai; Jeng, L. S.; Hung, W H; Ting, Shyh-Fann; Lee, K H; Tseng, Ming Lun; Cheng, Osbert; Liang, Chang

doi:10.7567/ssdm.2006.f-6-1

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 2006

DOI: 10.7567/ssdm.2006.f-6-1

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NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

Chien-Kai Huang¹,

L. S. Jeng²,

W H Hung³

et al.

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NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

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