Advanced Solid-State Photonics 2006
DOI: 10.1364/assp.2006.mb8
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Nd:BaWO4 Raman Laser

Abstract: Raman laser was constructed on the base of new Nd:BaWO 4 material Q-switched by LiF:F − 2 crystal. Emission at 1169 nm was obtained in 1.3 ns long pulse with energy 0.8 mJ. Absorption coefficient calculated for diode pumping at 803 nm is upper estimated value affected by pumping beam divergence. † Threshold energies and slope efficiencies were derived using absorbed pumping energy values. MB8

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