Nd<sup>3+</sup>:Ga-Ge-Sb-S glasses and fibers for luminescence in mid-IR: synthesis, structural characterization and rare earth spectroscopy

Chahal, Radwan; Starecki, Florent; Doualan, Jean‐Louis; Němec, Petr; Trapananti, A.; Prestipino, Carmelo; Tricot, Grégory; Boussard‐Plédel, Catherine; Michel, Karine; Braud, Alain; Camy, Patrice; Adam, Jean-Luc; Bureau, Bruno; Nazabal, Virginie

doi:10.1364/ome.8.001650

Cited by 26 publications

(8 citation statements)

References 68 publications

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“…The DSC curve of matrix glass without RE ions doped is shown in Figure 1b. The T g of the GGSS glass is about 300°C, which is similar to the result reported by Chahal et al 24 No obvious crystallization peaks exist, indicating the good thermal resistance to crystallization of GGSS glass and its appropriateness for drawing optical fiber. As shown in Figure 1c, the max value of infrared transmittance exceeds 70% during 2–12 µm for the matrix glass, covering the emission range of Er 3+ at 2.7 µm.…”

Section: Resultssupporting

confidence: 87%

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass

Liu

Xia

et al. 2023

J Am Ceram Soc.

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There are numerous vital usages for mid-infrared (MIR) lasers in satellite communication, biomedicine, military, remote sensing, and environmental monitoring. In this work, a progression of Er 3+ ions doped, Er 3+ /Pr 3+ ions codoped Ga 5 Ge 20 Sb 10 S 65 glasses were prepared, and their physical performances and structural characteristics were examined. To understand the non-phononassisted energy transfer mechanism, we recorded the up-conversion and infrared fluorescence emission spectra by pumping with a commercial 980 nm LD. Then the 2.7 µm strong fluorescence signal intensity can be obtained when the doped concentration of Pr 3+ is proper. After the doping of Pr 3+ , fluorescence lifetime results revealed that the lifetimes of the Er 3+ : 4 I 13/2 level fell dramatically from 7.33 to 1.90 ms, which experienced a much more significant decrease in lifetimes than the Er 3+ : 4 I 11/2 level. The MIR fluorescence performances were assessed by the determined J-O parameters and relative emission cross sections. Additionally, the generally huge emission cross sections and the small pump energy show that it is possible to obtain population inversion with relatively small pump energy; thus the Er 3+ /Pr 3+ glasses have great potential to be 2.7 µm laser materials. K E Y W O R D S2.7 µm emission, chalcogenide glass, Er 3+ /Pr 3+ co-doped, Ga 5 Ge 20 Sb 10 S 65 glass INTRODUCTIONRecently, mid-infrared (MIR) lasers about 3 µm certainly stand out enough to be noticed owing to their various useful applications, for example, military countermeasures, remote detecting, environment contamination checking, satellite correspondence, and clinical-medical procedure. [1][2][3][4][5] According to previous studies, Er 3+ is a good candidate material for 2.7 µm MIR emission due to its radiative transition of 4 I 11/2 → 4 I 13/2 . Additionally, with a 980 nm business laser, Er 3+ tends to be easily pumped. [6][7][8] However, it is as yet a critical difficulty to get the productive 2.7 µm emission because of the self-terminating issue; thus, the 4 I 13/2 level has a larger lifetime than the 4 I 11/2 level. Through energy transfer (ET), Pr 3+ , Ho 3+ , Yb 3+ , and Tm 3+ have been added as sensitizers to extinguish the Er 3+ : 4 I 13/2 level, which helps solve the issue of self-terminating.Given that the non-phonon-assisted ET process is a more effective way of quenching the electrons of 4 I 13/2 levels compared with the phonon-helped one. The energy

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Section: Resultssupporting

confidence: 87%

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass

Liu

Xia

et al. 2023

J Am Ceram Soc.

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“…A very small emission was detected at 1324 nm, which was attributed to the 4 F 3/2 → 4 I 13/2 transition. Finally, an intense band was observed at 1505 nm, which might be due to 4 F 3/2 → 4 I 15/2 ; such a transition is not usually observed and could be promising for Mid-IR lasing [ 35 ].…”

Section: Resultsmentioning

confidence: 99%

Influence of the Addition of Rare Earth Elements on the Energy Storage and Optical Properties of Bi0.5Na0.5TiO3–0.06BaTiO3 Polycrystalline Thin Films

et al. 2023

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Rare earth element-doped Bi0.5Na0.5TiO3–BaTiO3 (BNT–BT–RE) polycrystalline thin films were processed on a platinized substrate by chemical solution deposition. The microstructure, dielectric, and ferroelectric properties were investigated for all prepared films. It was found that the incorporation of rare earth elements into the BNT–BT matrix increases both the dielectric constant and the breakdown strength while maintaining low dielectric losses, leading to an enhancement of the energy storage density to Wrec = 12 and 16 J/cm3 under an effective field of E = 2500 kV/cm, for Nd- and Dy-based films, respectively. The optical properties of films containing the lanthanide element were investigated and the obtained results bear interest for luminescence applications. The simultaneous appearance of ferroelectric and optical properties in the system under investigation is very promising for advanced optoelectronic devices.

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“…The N i total coordination numbers are calculated as: Assuming that the Ge, Ga, Sb and S atoms are 4-, 4-, 3-and 2-fold coordinated respectively, the investigated compositions are stoichiometric. According to the CONM and earlier Raman scattering spectroscopy results [26,30,61] in stoichiometric glasses M-S (M=Ge, Ga, Sb) bonds are the most dominant, and only a small amount of S-S and M-M bonds is expected. Several test runs were carried out to determine the bond types which are significant in the studied glasses.…”

Section: Reverse Monte Carlo Simulationsmentioning

confidence: 88%

The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

Pethes

Nazabal

Chahal

et al. 2019

Journal of Non-Crystalline Solids

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The structure of Ge 22 Ga 3 Sb 10 S 65 and Ge 15 Ga 10 Sb 10 S 65 glasses was investigated by neutron diffraction (ND), X-ray diffraction (XRD), and extended X-ray absorption fine structure (EXAFS) measurements at the Ge, Ga and Sb K-edges. Experimental data sets were fitted simultaneously in the framework of the reverse Monte Carlo (RMC) simulation technique. Short range order parameters were determined from the obtained large-scale configurations. It was found that the coordination numbers of Ge, Sb and S are around the values predicted by the Mott-rule (4, 3 and 2, respectively). The Ga atoms have on average 4 nearest neighbors. The structure of these stoichiometric glasses can be described by the chemically ordered network model: Ge-S, Ga-S and Sb-S bonds are the most important. Long Sb-S distances (0.3 -0.4 Å higher than the usual covalent bond lengths) are observed, suggesting that Sb atoms can be found in various local environments. 15-16 groups of the periodic table, the total coordination number of the elements (N i ) follows the Mottrule [36]: It is equal to 8-N, where N is the number of electrons in the valence shell of the ith element (e. g. Ge-As-Se [37], Ge-As-Te [38], Ge-Sb-Se [39], Ge-Sb-Te [40]). However glasses containing group 13 elements can deviate from this rule, and the total coordination number of Ga or In can be four instead of three [41 -44]. The structure of several chalcogenide glasses can be described in the framework of the chemically ordered network model (CONM) [45, 46]. This model predicts that M-Ch bonds are preferable, where M denotes the elements from groups 13, 14 or 15, and Ch means the chalcogen element. The structure of the stoichiometric glass can be built from tetrahedral and/or pyramidal units such as [GeCh 4/2 ] or [SbCh 3/2 ]. The M-M and Ch-Ch bonds are present only in non-stoichiometric glasses: M-M bonds in Ch-deficit (Ch-under stoichiometric) compositions and Ch-Ch bonds in Ch-rich (Ch-over stoichiometric) glasses.preparing Ge 22 Ga 3 Sb 10 S 65 and Ge 15 Ga 10 Sb 10 S 65 , i.e. 5N for germanium, gallium, antimony or sulphur.Commercial sulphur was further purified by successive distillations to remove carbon (CO 2 , CS 2 , COS) and hydrates or sulphide hydride (H 2 O, OH, SH) impurities. Then, the required amounts of chemical reagents were put in silica ampoules and pumped under vacuum (10 -4 mbar) for a few hours. The tubes were then sealed and heated at 850°C for 12h in a rocking furnace to ensure the homogenization of the melt. After water quenching, the glass rods were annealed near their glass transition temperatures for 6h. The densities of the samples were determined using a Mettler Toledo XS64 system measuring the weights of the samples in air and water. The density values are shown in Table 1.Neutron diffraction experiments were carried out at the 7C2 diffractometer of LLB (Saclay, France).

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Nd³⁺:Ga-Ge-Sb-S glasses and fibers for luminescence in mid-IR: synthesis, structural characterization and rare earth spectroscopy

Cited by 26 publications

References 68 publications

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass

Influence of the Addition of Rare Earth Elements on the Energy Storage and Optical Properties of Bi0.5Na0.5TiO3–0.06BaTiO3 Polycrystalline Thin Films

The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

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Nd3+:Ga-Ge-Sb-S glasses and fibers for luminescence in mid-IR: synthesis, structural characterization and rare earth spectroscopy

Cited by 26 publications

References 68 publications

Intense 2.7 µm emission of Er3+/Pr3+ doped Ga5Ge20Sb10S65 chalcogenide glass

Intense 2.7 µm emission of Er3+/Pr3+ doped Ga5Ge20Sb10S65 chalcogenide glass

Influence of the Addition of Rare Earth Elements on the Energy Storage and Optical Properties of Bi0.5Na0.5TiO3–0.06BaTiO3 Polycrystalline Thin Films

The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

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Nd³⁺:Ga-Ge-Sb-S glasses and fibers for luminescence in mid-IR: synthesis, structural characterization and rare earth spectroscopy

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass

Intense 2.7 µm emission of Er³⁺/Pr³⁺ doped Ga₅Ge₂₀Sb₁₀S₆₅ chalcogenide glass