2001
DOI: 10.1109/2944.974235
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Negative effective mass mechanism of negative differential drift velocity and terahertz generation

Abstract: The negative-differential-drift-velocity instability, which forms the basis of Gunn high-frequency generators, can originate from Ridley-Watkins-Hilsum or negative effective mass (NEM) mechanisms. The first mechanism is dissipative by nature. The second is mainly drift-related. Therefore, the second mechanism promises to be more effective. We show the existence of stationary oscillatory regimes in the ballistic NEM p + p p +-diodes, which have a base in the form of a periodic system of parallel p-type quantum-… Show more

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Cited by 15 publications
(6 citation statements)
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“…[34,39] As a point of emphasis, we note that the inertial effective mass becomes quite central in studies concerning complex quasiparticle formation [40,41] and for terahertz electromagnetic field generation. [42,43] Recent progress in attosecond technology has provided fine resolution on ultrashort time scales, which offers the potential for observing time-dependent inertial effective mass effects in graphene, as well as possible electrically induced electromagnetic field generation, due to carrier acceleration in the electric fields.…”
Section: Average Velocity Average Acceleration and Dynamical Effective Massmentioning
confidence: 99%
“…[34,39] As a point of emphasis, we note that the inertial effective mass becomes quite central in studies concerning complex quasiparticle formation [40,41] and for terahertz electromagnetic field generation. [42,43] Recent progress in attosecond technology has provided fine resolution on ultrashort time scales, which offers the potential for observing time-dependent inertial effective mass effects in graphene, as well as possible electrically induced electromagnetic field generation, due to carrier acceleration in the electric fields.…”
Section: Average Velocity Average Acceleration and Dynamical Effective Massmentioning
confidence: 99%
“…A microwave oscillator is created by applying a DC voltage to bias the device into its negative resistance region. Gunn diodes based on gallium arsenide are made for frequencies up to 200 GHz, while those relying on gallium nitride can reach up to 3 THz [64,65]. As these devices operate at room temperature in CW mode emitting monochromatic radiation in the range of 0.1-1 THz (from here on referred to as "sub-THz radiation"), they are suitable sources for coherent imaging.…”
Section: B Coherent Thz Sourcesmentioning
confidence: 99%
“…Thanks to its simple construction and an ability to generate oscillations at very high frequencies, it is used in many systems. Diodes based on gallium arsenide are able to generate radiation at a frequency reaching 200 GHz, while frequency reachable by the diodes based on gallium nitride can be as high as 3 THz [12]. Moreover, Gunn generators are tunable in a wide frequency range [13].…”
Section: Gunn Diodementioning
confidence: 99%