1975
DOI: 10.1143/jpsj.38.115
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Neutron Diffraction Study of NiS2with Pyrite Structure

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Cited by 57 publications
(24 citation statements)
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“…The temperature dependence of the superlattice intensity ( Fig. 1a) scales linearly with the magnetic M2 neutron diffraction intensity 9 . The x-ray supperlattice and neutron M2 diffraction intensities scale quadratically with the superlattice displacement and also the magnetic moment, respectively.…”
Section: Antiferromagnetism At Ambient and High Pressuresmentioning
confidence: 89%
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“…The temperature dependence of the superlattice intensity ( Fig. 1a) scales linearly with the magnetic M2 neutron diffraction intensity 9 . The x-ray supperlattice and neutron M2 diffraction intensities scale quadratically with the superlattice displacement and also the magnetic moment, respectively.…”
Section: Antiferromagnetism At Ambient and High Pressuresmentioning
confidence: 89%
“…However, vacancies are responsible for the variable canting angle in an antiferromagnet 18 , as observed in the M2 phase of NiS 2 (Ref. [9,10]). …”
Section: Experimental Methodsmentioning
confidence: 98%
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“…In this paper, we focus on the antiferromagnetic (AF) χ-SDW metals and insulators with ℓ S ℓ = 0 in materials and models with strong electron correlation and magnetic frustration. They have been discovered in charge transfer insulators NiS 2 [8][9][10][11], metallic γ-FeMn alloys [12][13][14][15] and related materials where the magnetic moments reside on the frustrated face-centered-cubic lattice. Neutron scattering observed noncoplanar AF order with 4-sublattices and 3-ordering wavevectors.…”
mentioning
confidence: 99%
“…-and divalent metal ions, have been known to show interesting magnetic and transport properties. Among them, FeS2 is a nonmagnetic semiconductor with a band gap of Es 0.9 eV [20], and NiS2 is an antiferromagnetic semiconductor with Eg ≈ 0.3 eV [21] and TN 40 K [22]. The band gap of FeS2 is a direct consequence of the filled t 25 band of Fe 3d and can be well explained by the band theory.…”
Section: Application To Diluted and Concentrated Magnetic Semiconductorsmentioning
confidence: 91%