2021
DOI: 10.1088/1674-1056/abccb3
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Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*

Abstract: Three-dimensional integrated circuits (3D ICs) have entered into the mainstream due to their high performance, high integration, and low power consumption. When used in atmospheric environments, 3D ICs are irradiated inevitably by neutrons. In this paper, a 3D die-stacked SRAM device is constructed based on a real planar SRAM device. Then, the single event upsets (SEUs) caused by neutrons with different energies are studied by the Monte Carlo method. The SEU cross-sections for each die and for the whole three-… Show more

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(3 citation statements)
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“…Figure 4 shows rough approximations for the effective LET of secondary particle as functions of neutron energies. Following (10) and (12), one can obtain an approximate expression for estimating the energy dependence of the neutron-induced cross-sections:…”
Section: Nucleon-induced Seu Cross-sectionsmentioning
confidence: 99%
See 2 more Smart Citations
“…Figure 4 shows rough approximations for the effective LET of secondary particle as functions of neutron energies. Following (10) and (12), one can obtain an approximate expression for estimating the energy dependence of the neutron-induced cross-sections:…”
Section: Nucleon-induced Seu Cross-sectionsmentioning
confidence: 99%
“…The neutron-induced nuclear reaction crosssections at relatively high energies ( n ε ≥ 10 MeV) are approximately constant, max n Σ ~ 1-2 bn, whereas the low-energy ( n ε ≤ 2 MeV) cross-sections are usually much smaller, although the behavior of the curve can be very complex [28]. Following (10) and (12), one can obtain an approximate expression for estimating the energy dependence of the neutron-induced cross-sections:…”
Section: Nucleon-induced Seu Cross-sectionsmentioning
confidence: 99%
See 1 more Smart Citation