New books on physics and related sciences

Abstract

A complete model of C diffusion and its effect on dopant diffusion has been developed and fitted to experimental data acquired in our previous works, and in the published literature. The role of C clustering in the diffusion behaviour of C and dopant impurities in the presence of very high C concentrations has been modelled. Results on enhanced Sb diffusion in the presence of very high C concentration produced by MBE can be explained on the assumption that a small, but significant, percentage of the C is clustered following epitaxy. For C content below 1 × 10 20 cm −3 , and for higher concentrations provided the initial level of clustered C is known, our model provides an important predictive capability for the effect of C on dopant diffusion.