New Developments in Dilute Nitride Semiconductor Research

Shan, Wenlei; Walukiewicz, W.; Yu, Kun; Wu, Jeffrey C.S.; Ager, Joel W.; Haller, E. E.

doi:10.1142/9781860949036_0012

Cited by 6 publications

(5 citation statements)

References 77 publications

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“…They also predicted an indirect-to-direct crossover occurring near 𝑥 = 0.46. This contradicts the later measurements that show DN GaPN has a direct bandgap for 𝑥 as small as 0.0043 5,20,[38][39][40] . A crossover at 𝑥 = 0.03 was calculated using an empirical pseudopotential method with 512-atom supercells 41 , still in disagreement with the experiment just mentioned.…”

Section: Calculation Methodscontrasting

confidence: 74%

“…A crossover at 𝑥 = 0.03 was calculated using an empirical pseudopotential method with 512-atom supercells 41 , still in disagreement with the experiment just mentioned. Shan et al 38 explained this direct nature of the bandgap in DN GaPN in terms of coupling between the extended Γ states of the host material and the localized nitrogen states, expressed as the band anticrossing (BAC) model, which was first introduced to explain the bandgap phenomena of DN GaInAsN 30 . Although the two-level BAC model ignores the details of different N states (isolated N atoms, N neighbors, N clusters, etc.…”

Section: Calculation Methodsmentioning

confidence: 99%

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Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Zou

Goodnick

2020

Journal of Applied Physics

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Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the 3 5 * tight-binding model to calculate the fullband electronic structure of dilute-N GaPAsN, and then calculate the optical response functions considering direct transitions within the electric dipole approximation. Good agreement is obtained for the dielectric function in comparison to available optical data for dilute nitrides. To achieve this, the 3 5 * parameters for GaP and GaAs are optimized for their optical properties in comparison to published data, which are then used as the basis for the 3 5 * parameters for dilute-N GaPN and GaAsN. The calculated absorption between the valence band and the newly formed lowest conduction band of the dilute nitrides increases as the N fraction increases, in agreement with experiments, mainly due to the net increase in their coupling in the entire Brillouin zone, supported by the calculated momentum matrix element in the present work.

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Section: Calculation Methodscontrasting

confidence: 74%

Section: Calculation Methodsmentioning

confidence: 99%

Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Zou

Goodnick

2020

Journal of Applied Physics

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“…Because of the huge miscibility gap and the low solubility of nitrogen in the melt and in the solid, epitaxial growth of dilute nitride bulk layers is a great challenge. Since the higher growth temperatures limit the N incorporation because of micro-phase segregation [26,27], a low-temperature (T < 600 ºC) version of the LPE method was used. However a large miscibility gap exists at temperatures lower than 600 ºC for Ga-rich compounds in the In-Ga-As-Sb system [28,29].…”

Section: Methodsmentioning

confidence: 99%

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Milanova

Asenova

Shtinkov

et al. 2018

Journal of Crystal Growth

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Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsNSb layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.

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“…Despite the fact that from a theoretical point of view, the principle of operation of IBSC-type cells has been comprehensively described in [18], the problem of practical implementation of this concept in the form of a semiconductor material with an intermediate energy bandwidth, ensuring effective conversion of solar energy into electricity, still remains valid. Therefore, the mechanism of the formation of intermediate bands in semiconductors, as well as its utilitarian aspects, is the subject of many research papers, including a few selected current research directions based on the use of ion implantation [19][20][21][22][23][24][25]. One of them is an approach that includes the use of ion implantation to introduce dopants of very high concentration into the semiconductor substrate [25] or subjecting the silicon layer to implantation with metal ions of very high doses [20,23].…”

Section: Current Research Directions Using Ion Implantationmentioning

confidence: 99%

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Węgierek

Pastuszak

2021

Materials

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The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of ρ = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆E = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

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New Developments in Dilute Nitride Semiconductor Research

Cited by 6 publications

References 77 publications

Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

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