New Emissivity Measuring System with High Accuracy Under Controlled Environment Conditions

Zhang, Kaihua; Hu, Qingqing; Yu, Kun; Liu, Yufang

doi:10.1007/s10765-022-03129-3

Cited by 5 publications

(1 citation statement)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the above equations, n = 1, 2, 3, • • • , T n−1 and T n represent the initial temperature and final temperature of the nth heating period, T 0 = T S = T ∞ = 25 • C. The simulation curves of heating temperature under different resistivity are shown in Figure 4. When the simulation conditions are within certain parameters (input current I = 1.1 A), the length and width of the micro-hotplate are both 5 mm, the thickness of the Si, SiO 2 , and Cu layers are H1 = 300 µm, H2 = 1 µm, and H3 = 25 µm, and the material emissivity is referred to in references [24,25]. The simulation curves of heating temperature under different resistivities of silicon layers are shown in Figure 4.…”

Section: Effect Of Silicon Resistivity On Heatingmentioning

confidence: 99%

Design and Simulation of High-Temperature Micro-Hotplate for Synthesis of Graphene Using uCVD Method

Bi,

Hu,

Lin

et al. 2024

Micromachines

View full text Add to dashboard Cite

The uCVD (microchemical vapor deposition) graphene growth system is an improved CVD system that is suitable for scientific research and experimental needs, and it is characterized by its rapid, convenient, compact, and low-cost features. The micro-hotplate based on an SOI wafer is the core component of this system. To meet the requirements of the uCVD system for the micro-hotplate, we propose a suspended multi-cantilever heating platform composed of a heating chip, cantilevers, and bracket. In this article, using heat transfer theory and thermoelectric simulation, we demonstrate that the silicon resistivity, current input cross-sectional size, and the convective heat transfer coefficient have a huge impact on the performance of the micro-heating platform. Therefore, in the proposed solution, we adopt a selective doping process to achieve a differentiated configuration of silicon resistivity in the cantilevers and heating chip, ensuring that the heating chip meets the requirements for graphene synthesis while allowing the cantilevers to withstand high currents without damage. Additionally, by adding brackets, the surfaces of the micro-hotplate have the same convective heat transfer environment, reducing the surface temperature difference, and improving the cooling rate. The simulation results indicate that the temperature on the micro-hotplate surface can reach 1050.8 °C, and the maximum temperature difference at different points on the surface is less than 2 °C, which effectively meets the requirements for the CVD growth of graphene using Cu as the catalyst.

show abstract

Section: Effect Of Silicon Resistivity On Heatingmentioning

confidence: 99%