New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes

An empirical DC to high-frequency model for InP/InGaAs HBTs

“…To predict the HBT characteristics, several physics-based HBT nonlinear models, such as VBIC (McAndrew et al, 1995;Wei, Gering, & Tkachenko, 2005), HICUM (Rein & Schroter, 1987;Stubing & Rein, 1987), MEXTRAM (Degraaff & Kloosterman, 1985), FBH (Rudolph, Doerner, Beilenhoff, & Heymann, 2000) and Agilent (Iwamoto, Root, Scott, & Cognata, 2003), have been reported, and many integrated circuit design tools have already incorporated those models.…”

Extraction of VBIC model for SiGe HBTs made easy by going through Gummel-Poon model

“…Though several limitations exist for SGP model, until today no widely accepted alternative is available to replace it. Several advanced models, such as VBIC [2], HICUM [3,4] and MEXTRAM [5] have been proposed and currently under evaluation by the Compact Model Council of EIA in USA (http://www.eigroup.org/cmc/bipolar/default.htm). The VBIC model is the direct extension of SGP model proposed by a group of people from widely representative industries, while the other two models are developed independently and consistently by dedicated developers in conjunction with bipolar process development.…”

Characterization and modeling of avalanche multiplication in HBTs

“…In the more advanced bipolar models such as VBIC [8,9], Mextram [10], the avalanche model is based on the well-known Chynoweth's empirical law and local electric field derivation [11]. In HICUM model [12,13], the avalanche model was derived similar to that of Mextram on the basis that breakdown is caused by the maximum local electric field, but more depends on the device geometric parameter [14].…”