New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor

Nagel, N.; Bruchhaus, R.; Hornik, K.; Egger, Ulrich; Zhuang, H.; Joachim, H.-O.; Rohr, T.; Beitel, G.; Ozaki, T.; Kunishima, I.

doi:10.1109/vlsit.2004.1345444

Cited by 16 publications

(7 citation statements)

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“…FeRAMs are commercially available in Texas Instruments' microprocessors and Fujitsu's RF tags [222][223][224]. The commonly used ferroelectric material in FeRAM is lead zirconium titanate (Pb1.1Zr0.48Ti0.52O3-PZT) due to its high switching speed [225,226], low cost per bit ($/bit), and low operation voltage [227,228]. Hence, the best properties for flexible NVM FeRAM are reported for structures incorporating PZT as the ferroelectric material, as evident from Table 6.…”

Section: Flexible Ferammentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

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Section: Flexible Ferammentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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“…Besides having a capacitor-type cell, a FeRAM has a transistor-type cell and a chain cell, 31) which are more suitable for applications requiring a larger memory capacity. A transistor-type cell has a structure similar to that of a MOS transistor, except the gate oxide is replaced with a ferroelectric oxide.…”

Section: Transistor-type Feramsmentioning

confidence: 99%

Review of Emerging New Solid-State Non-Volatile Memories

Fujisaki

2013

Jpn. J. Appl. Phys.

114

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The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change randomaccess memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

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“…Beside a capacitor type cell, FeRAM has a transistor type and a chain cell [5] type that are more suitable for high density application. A transistor type cell has a structure like a MOS transistor but the gate oxide is replaced with a ferroelectric oxide.…”

Section: Ferammentioning

confidence: 99%

Overview of emerging semiconductor non-volatile memories

Fujisaki

2012

IEICE Electron. Express

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Abstract:In this article, emerging new semiconductor non-volatile memories are reviewed. We are reaching the integration limit of Flash memories and new types of memories replacing Flash have been actively proposed. Each type of memory is briefly introduced and the possibility of replacing Flash is discussed. FeRAMs, MRAMs, and PCRAMs are already in production and the physics behind the operations and reliabilities are well understood. ReRAMs are now approaching to practical use. However, the operation mechanisms of the other memories have not been understood perfectly. Therefore, it is not fruitful to compare the superiority of each technology at this moment because some innovative idea might enhance a specific technology that happened from time to time.

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New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor

Cited by 16 publications

References 1 publication

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Review of Emerging New Solid-State Non-Volatile Memories

Overview of emerging semiconductor non-volatile memories

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