2021
DOI: 10.1007/s10854-020-05214-5
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New negative temperature coefficient ceramics in ACu3Ti4O12 (A = Sr, La2/3, Ca, Y2/3) system

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Cited by 4 publications
(3 citation statements)
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“…The value of activation energy ( E a ) is calculated by the dependence of resistance on temperature, which represents the lowest energy required for the reaction to occur, and is listed in Table 4. The activation energy of YCTO‐S is about 0.6 eV, in general agreement with the results reported in the previous work 60 . The activation energy of YCTO‐P is much lower than that of YCTO‐S.…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…The value of activation energy ( E a ) is calculated by the dependence of resistance on temperature, which represents the lowest energy required for the reaction to occur, and is listed in Table 4. The activation energy of YCTO‐S is about 0.6 eV, in general agreement with the results reported in the previous work 60 . The activation energy of YCTO‐P is much lower than that of YCTO‐S.…”
Section: Resultssupporting
confidence: 91%
“…This greatly affects the possibility of electron hopping to adjacent positions, leading to its higher resistivity. 59 The value of activation energy (E a ) is calculated by the dependence of resistance on temperature, which represents the lowest energy required for the reaction to 60 The activation energy of YCTO-P is much lower than that of YCTO-S. The reduction of the activation energy contributes to the reduction of the energy required for the transition from the normal state to the active state where chemical reactions can easily occur.…”
Section: Electrical Property Analysismentioning
confidence: 99%
“…[9,[13][14][15][16][17][18][19][20][21] have been found to have the similar high dielectric constant as CaCu 3 Ti 4 O 12 , which revises the report by Subramanian [2] and brings new questions about the physical origin of dielectric response in ACu 3 Ti 4 O 12 ceramics. Internal barrier layer capacitor (IBLC) effects related to defect structure in grain and grain boundaries have been widely adopted to explain the origin of high dielectric response in these ACu 3 Ti 4 O 12 ceramics [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28].…”
Section: Introductionmentioning
confidence: 99%